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    Multisectional laser
    1.
    发明授权
    Multisectional laser 有权
    多段激光

    公开(公告)号：US07957437B2

    公开(公告)日：2011-06-07

    申请号：US12456720

    申请日：2009-06-22

    Applicant: Johann Peter Reithmaier ,  Lars Bach ,  Wolfgang Kaiser

    Inventor： Johann Peter Reithmaier ,  Lars Bach ,  Wolfgang Kaiser

    IPC: H01S3/10

    CPC classification number: H01S5/06256 ,  H01S5/06226 ,  H01S5/06251 ,  H01S5/125

    Abstract: Disclosed is a semiconductor laser in which the substrate comprises at least three independent functional sections in the direction of light wave propagation, said functional sections serving different functions and being individually triggered by means of electrodes via electrode leads. An intensification zone, a grid zone, and a phase adjustment zone are provided as functional sections. The light wave is optically intensified in the intensification zone while the phase of the advancing and returning wave is adjusted in the phase adjustment zone. The grid zone is used for selecting the wavelength and adjusting the intensity of coupling between the intensification zone and the phase adjustment zone.

    Abstract translation: 公开了一种半导体激光器，其中基板在光波传播方向上包括至少三个独立的功能部分，所述功能部分用于不同的功能，并且通过电极通过电极引线单独触发。 功能部分提供强化区域，网格区域和相位调整区域。 在相位调整区域中，在强化区域中光波被光学增强，同时在相位调整区域调整前进和返回波形的相位。 网格区域用于选择波长并调整强化区域和相位调整区域之间的耦合强度。

    Multisectional laser
    3.
    发明授权
    Multisectional laser 有权
    多段激光

    公开(公告)号：US07570681B2

    公开(公告)日：2009-08-04

    申请号：US10554571

    申请日：2004-04-29

    Applicant: Johann Peter Reithmaier ,  Lars Bach ,  Wolfgang Kaiser

    Inventor： Johann Peter Reithmaier ,  Lars Bach ,  Wolfgang Kaiser

    IPC: H01S5/00

    CPC classification number: H01S5/06256 ,  H01S5/06226 ,  H01S5/06251 ,  H01S5/125

    Abstract: Disclosed is a semiconductor laser (10) in which the substrate (11) comprises at least three independent functional sections (17, 20, 23) in the direction of light wave propagation (A), said functional sections (17, 20, 23) serving different functions and being individually triggered by means of electrodes (15, 18, 21) via electrode leads (16, 19, 22). An intensification zone (17), a grid zone (20), and a phase adjustment zone (23) are provided as functional sections. The light wave is optically intensified in the intensification zone (17) while the phase of the advancing and returning wave is adjusted in the phase adjustment zone (23). The grid zone (20) is used for selecting the wavelength and adjusting the intensity of coupling between the intensification zone (17) and the phase adjustment zone (23).

    Abstract translation: 公开了一种半导体激光器（10），其中基板（11）在光波传播方向（A）的方向上包括至少三个独立的功能部分（17,20,23），所述功能部分（17,20,23） 通过电极引线（16,19,22）通过电极（15,18,21）独立地触发不同的功能。 作为功​​能部分提供增强区域（17），格栅区域（20）和相位调整区域（23）。 在相位调整区域（23）调整前进和返回波形的相位，增强区域（17）中的光波被光学增强。 网格区域（20）用于选择波长并调节强化区域（17）和相位调整区域（23）之间的耦合强度。

    Effusion cell of a molecular beam epitaxy system
    4.
    发明授权
    Effusion cell of a molecular beam epitaxy system 失效
    分子束外延系统的影响细胞

    公开(公告)号：US5171370A

    公开(公告)日：1992-12-15

    申请号：US510517

    申请日：1990-04-18

    Applicant: Johann-Peter Reithmaier ,  Heinrich Schloetterer

    Inventor： Johann-Peter Reithmaier ,  Heinrich Schloetterer

    IPC: C30B23/08 ,  C30B23/06 ,  H01L21/203

    CPC classification number: C30B23/066

    Abstract: An apparatus with a crucible in an effusion cell of a molecular beam epitaxy system provides the crucible shaped and mounted in such a way that the molecular beam is optimized relative to the substrate. In particular, when a circular substrate is tilted relative to the beam direction, the shape of the crucible, of the crucible mount, and the alignment of the center axis of the crucible relative to the center axis of the cell are adapted to optimize the beam impingement on the substrate.

    Abstract translation: 具有分子束外延系统的渗流池中的坩埚的装置提供了以相对于衬底优化分子束的方式成形和安装的坩埚。 特别地，当圆形基片相对于光束方向倾斜时，坩埚，坩埚安装件的形状以及坩埚的中心轴线相对于电池单元的中心轴线的对准适于使光束 撞击在基板上。

    Semiconductor laser with a weakly coupled grating
    5.
    发明授权
    Semiconductor laser with a weakly coupled grating 有权
    具有弱耦合光栅的半导体激光器

    公开(公告)号：US07776634B2

    公开(公告)日：2010-08-17

    申请号：US12290932

    申请日：2008-11-05

    Applicant: Johann Peter Reithmaier ,  Lars Bach

    Inventor： Johann Peter Reithmaier ,  Lars Bach

    IPC: H01L21/00

    CPC classification number: H01S5/12 ,  H01S5/06256 ,  H01S5/1203 ,  H01S5/1228 ,  H01S5/1231 ,  H01S5/1237 ,  H01S5/125 ,  H01S5/22

    Abstract: A semiconductor laser with a semiconductor substrate, a laser layer arranged on the semiconductor substrate, a waveguide arranged parallel to the laser layer and a strip shaped grating structure is disclosed. The laser layer, the waveguide and the grating are arranged in a configuration which results in weak coupling between the laser light and the grating structure, so that the laser light interacts with an increased number of grating elements. A process for the production of such a semiconductor laser is also disclosed.

    Abstract translation: 公开了具有半导体衬底的半导体激光器，布置在半导体衬底上的激光层，平行于激光层布置的波导和带状光栅结构。 激光层，波导和光栅被布置成导致激光和光栅结构之间的弱耦合的结构，使得激光与增加数量的光栅元件相互作用。 还公开了一种用于制造这种半导体激光器的方法。

    Multisectional laser
    6.
    发明申请
    Multisectional laser 有权
    多段激光

    公开(公告)号：US20090268764A1

    公开(公告)日：2009-10-29

    申请号：US12456720

    申请日：2009-06-22

    Applicant: Johann Peter Reithmaier ,  Lars Bach ,  Wolfgang Kaiser

    Inventor： Johann Peter Reithmaier ,  Lars Bach ,  Wolfgang Kaiser

    IPC: H01S3/10 ,  H01S3/13

    CPC classification number: H01S5/06256 ,  H01S5/06226 ,  H01S5/06251 ,  H01S5/125

    Abstract: Disclosed is a semiconductor laser in which the substrate comprises at least three independent functional sections in the direction of light wave propagation, said functional sections serving different functions and being individually triggered by means of electrodes via electrode leads. An intensification zone, a grid zone, and a phase adjustment zone are provided as functional sections. The light wave is optically intensified in the intensification zone while the phase of the advancing and returning wave is adjusted in the phase adjustment zone. The grid zone is used for selecting the wavelength and adjusting the intensity of coupling between the intensification zone and the phase adjustment zone.

    Abstract translation: 公开了一种半导体激光器，其中基板在光波传播方向上包括至少三个独立的功能部分，所述功能部分用于不同的功能，并且通过电极通过电极引线单独触发。 功能部分提供强化区域，网格区域和相位调整区域。 在相位调整区域中，在强化区域中光波被光学增强，同时在相位调整区域调整前进和返回波形的相位。 网格区域用于选择波长并调整强化区域和相位调整区域之间的耦合强度。

    Semiconductor laser with a weakly coupled grating
    7.
    发明申请
    Semiconductor laser with a weakly coupled grating 有权
    具有弱耦合光栅的半导体激光器

    公开(公告)号：US20090117678A1

    公开(公告)日：2009-05-07

    申请号：US12290932

    申请日：2008-11-05

    Applicant: Johann Peter Reithmaier ,  Lars Bach

    Inventor： Johann Peter Reithmaier ,  Lars Bach

    IPC: H01L33/00 ,  H01S5/00

    CPC classification number: H01S5/12 ,  H01S5/06256 ,  H01S5/1203 ,  H01S5/1228 ,  H01S5/1231 ,  H01S5/1237 ,  H01S5/125 ,  H01S5/22

    Abstract: A semiconductor laser with a semiconductor substrate, a laser layer arranged on the semiconductor substrate, a waveguide arranged parallel to the laser layer and a strip shaped grating structure is disclosed. The laser layer, the waveguide and the grating are arranged in a configuration which results in weak coupling between the laser light and the grating structure, so that the laser light interacts with an increased number of grating elements. A process for the production of such a semiconductor laser is also disclosed.

    Abstract translation: 公开了具有半导体衬底的半导体激光器，布置在半导体衬底上的激光层，平行于激光层布置的波导和带状光栅结构。 激光层，波导和光栅被布置成导致激光和光栅结构之间的弱耦合的结构，使得激光与增加数量的光栅元件相互作用。 还公开了一种用于制造这种半导体激光器的方法。

    Semiconductor laser with a weakly coupled grating
    8.
    发明授权
    Semiconductor laser with a weakly coupled grating 有权
    具有弱耦合光栅的半导体激光器

    公开(公告)号：US07494836B2

    公开(公告)日：2009-02-24

    申请号：US11393611

    申请日：2006-03-30

    Applicant: Johann Peter Reithmaier ,  Lars Bach

    Inventor： Johann Peter Reithmaier ,  Lars Bach

    IPC: H01L21/00

    CPC classification number: H01S5/12 ,  H01S5/06256 ,  H01S5/1203 ,  H01S5/1228 ,  H01S5/1231 ,  H01S5/1237 ,  H01S5/125 ,  H01S5/22

    Abstract: A semiconductor laser with a semiconductor substrate, a laser layer arranged on the semiconductor substrate, a waveguide arranged parallel to the laser layer and a strip shaped grating structure is disclosed. The laser layer, the waveguide and the grating are arranged a configuration which results in weak coupling between the laser light and the grating structure, so that the laser light interacts with an increased number of grating elements. A process for the production of such a semiconductor laser is also disclosed.

    Abstract translation: 公开了具有半导体衬底的半导体激光器，布置在半导体衬底上的激光层，平行于激光层布置的波导和带状光栅结构。 激光层，波导和光栅布置成导致激光和光栅结构之间的弱耦合的结构，使得激光与增加数量的光栅元件相互作用。 还公开了一种用于制造这种半导体激光器的方法。

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