发明授权
- 专利标题： CVD process capable of reducing incubation time
- 专利标题（中）： CVD工艺能够减少孵化时间
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申请号： US10617819申请日： 2003-07-14
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公开(公告)号： US07063871B2公开(公告)日： 2006-06-20
- 发明人: Hideaki Yamasaki , Tatsuo Hatano , Tsukasa Matsuda , Taro Ikeda , Kazuhito Nakamura , Koumei Matsuzawa , Yumiko Kawano , Mitsuhiro Tachibana
- 申请人： Hideaki Yamasaki , Tatsuo Hatano , Tsukasa Matsuda , Taro Ikeda , Kazuhito Nakamura , Koumei Matsuzawa , Yumiko Kawano , Mitsuhiro Tachibana
- 申请人地址： JP Tokyo
- 专利权人： Tokyo Electron Limited
- 当前专利权人： Tokyo Electron Limited
- 当前专利权人地址： JP Tokyo
- 代理机构： Crowell & Moring LLP
- 优先权： JP2002-205516 20020715
- 主分类号： C23C16/16
- IPC分类号： C23C16/16
摘要：
A metal CVD process includes a step (A) of introducing a gaseous source material containing a metal carbonyl compound into a process space adjacent to a surface of a substrate to be processed in such a manner that the metal carbonyl compound has a first partial pressure, and a step (B) of depositing a metal film on the surface of the substrate by introducing a gaseous source material containing the metal carbonyl compound into the process space in such a mater that the metal carbonyl compound has a second, smaller partial pressure. The step (A) is conducted such that there is caused no substantial deposition of the metal film on the substrate.
公开/授权文献
- US20040025789A1 CVD process capable of reducing incubation time 公开/授权日：2004-02-12