公开(公告)号：US07063871B2

公开(公告)日：2006-06-20

申请号：US10617819

申请日：2003-07-14

申请人： Hideaki Yamasaki ,  Tatsuo Hatano ,  Tsukasa Matsuda ,  Taro Ikeda ,  Kazuhito Nakamura ,  Koumei Matsuzawa ,  Yumiko Kawano ,  Mitsuhiro Tachibana

发明人： Hideaki Yamasaki ,  Tatsuo Hatano ,  Tsukasa Matsuda ,  Taro Ikeda ,  Kazuhito Nakamura ,  Koumei Matsuzawa ,  Yumiko Kawano ,  Mitsuhiro Tachibana

IPC分类号： C23C16/16

CPC分类号： C23C16/16

摘要： A metal CVD process includes a step (A) of introducing a gaseous source material containing a metal carbonyl compound into a process space adjacent to a surface of a substrate to be processed in such a manner that the metal carbonyl compound has a first partial pressure, and a step (B) of depositing a metal film on the surface of the substrate by introducing a gaseous source material containing the metal carbonyl compound into the process space in such a mater that the metal carbonyl compound has a second, smaller partial pressure. The step (A) is conducted such that there is caused no substantial deposition of the metal film on the substrate.

摘要翻译： 金属CVD法包括将含有羰基金属化合物的气态源材料以与金属羰基化合物具有第一分压的方式相连接的待处理基板的表面的工艺空间引入的工序（A） 以及在金属羰基化合物具有第二较小分压的情况下，通过将含有羰基金属化合物的气态源材料引入到工艺空间中，在基板的表面上沉积金属膜的工序（B）。 进行步骤（A），使得金属膜不会在基板上实质上沉积。

公开(公告)号：US20050069641A1

公开(公告)日：2005-03-31

申请号：US10673910

申请日：2003-09-30

申请人： Tsukasa Matsuda ,  Taro Ikeda ,  Tatsuo Hatano ,  Mitsuhiro Tachibana ,  Hideaki Yamasaki ,  Gert Leusink ,  Fenton McFeely ,  Sandra Malhotra ,  Andrew Simon ,  John Yurkas

发明人： Tsukasa Matsuda ,  Taro Ikeda ,  Tatsuo Hatano ,  Mitsuhiro Tachibana ,  Hideaki Yamasaki ,  Gert Leusink ,  Fenton McFeely ,  Sandra Malhotra ,  Andrew Simon ,  John Yurkas

IPC分类号： C23C16/16 ,  C23C16/44 ,  C23C16/455 ,  H01L21/285 ,  B05D3/02 ,  C23C16/00

CPC分类号： C23C16/4408 ,  C23C16/16 ,  C23C16/45523 ,  H01L21/28562

摘要： A method for depositing metal layers with good surface morphology using sequential flow deposition includes alternately exposing a substrate in a process chamber to a metal-carbonyl precursor gas and a reducing gas. During exposure with the metal-carbonyl precursor gas, a thin metal layer is deposited on the substrate, and subsequent exposure of the metal layer to the reducing gas aids in the removal of reaction by-products from the metal layer. The metal-carbonyl precursor gas and a reducing gas exposure steps can be repeated until a metal layer with a desired thickness is achieved. The metal-carbonyl precursor can, for example, be selected from W(CO)6, Ni(CO)4, Mo(CO)6, Co2(CO)8, Rh4(CO)12, Re2(CO)10, Cr(CO)6, and Ru3(CO)12.

摘要翻译： 使用顺序流动沉积沉积具有良好表面形态的金属层的方法包括将处理室中的衬底交替地暴露于羰基金属前体气体和还原气体。 在用羰基金属前驱体气体曝光的同时，在基板上沉积薄金属层，随后将金属层暴露于还原气体有助于从金属层除去反应副产物。 可以重复金属羰基前体气体和还原气体暴露步骤，直到达到具有所需厚度的金属层。 金属羰基前体可以例如选自W（CO）6，Ni（CO）4，Mo（CO）6，Co2（CO）8，Rh4（CO）12，Re2（CO） （CO）6和Ru 3（CO）12。

公开(公告)号：US20100167540A1

公开(公告)日：2010-07-01

申请号：US12223781

申请日：2007-02-09

申请人： Takashi Sakuma ,  Taro Ikeda ,  Osamu Yokoyama ,  Tsukasa Matsuda ,  Tatsuo Hatano ,  Yasushi Mizusawa

发明人： Takashi Sakuma ,  Taro Ikeda ,  Osamu Yokoyama ,  Tsukasa Matsuda ,  Tatsuo Hatano ,  Yasushi Mizusawa

IPC分类号： H01L21/768 ,  C23C14/34

CPC分类号： C23C14/046 ,  H01J37/321 ,  H01J37/34 ,  H01L21/2855 ,  H01L21/76846 ,  H01L21/76877 ,  H01L21/76882 ,  H01L21/76883

摘要： Disclosed is a technique for embedding metal in a recess provided in the surface of a process object, such as a semiconductor wafer W, only by plasma sputtering. The metal is copper as a typical example. The recess has a microscopic hole or trench having a diameter or width of 100 nm or less as a typical example. A film forming step and a diffusion step are alternately performed a plurality of times. The film forming step deposits a small amount of a metal film in the recess. The diffusion step moves the deposited metal film toward the bottom portion of the recess. In the film forming step, bias power to be applied to a stage for supporting the wafer W is set to a value ensuring that, on the surface of the wafer W, the rate of metal deposition due to the drawing-in of metal particles is substantially equal to the rate of the sputter etching by plasma. In the diffusion step, the wafer W is maintained at a temperature which permits occurrence of surface diffusion of the metal film deposited in the recess.

摘要翻译： 公开了一种仅通过等离子体溅射将金属嵌入设置在诸如半导体晶片W的处理对象表面的凹部中的技术。 金属是铜，作为典型的例子。 该凹部具有作为典型实例的直径或宽度为100nm或更小的微孔或沟槽。 交替进行成膜步骤和扩散步骤。 成膜步骤在凹槽中沉积少量的金属膜。 扩散步骤将沉积的金属膜移向凹部的底部。 在成膜步骤中，施加到用于支撑晶片W的载物台的偏置功率被设定为确保在晶片W的表面上由金属颗粒的吸入引起的金属沉积速率为 基本上等于通过等离子体的溅射蚀刻的速率。 在扩散步骤中，晶片W保持在允许沉积在凹槽中的金属膜的表面扩散出现的温度。

公开(公告)号：US20090183984A1

公开(公告)日：2009-07-23

申请号：US12223383

申请日：2007-01-26

申请人： Takashi Sakuma ,  Taro Ikeda ,  Osamu Yokoyama ,  Tsukasa Matsuda ,  Tatsuo Hatano ,  Yasushi Mizusawa

发明人： Takashi Sakuma ,  Taro Ikeda ,  Osamu Yokoyama ,  Tsukasa Matsuda ,  Tatsuo Hatano ,  Yasushi Mizusawa

IPC分类号： C23C14/34 ,  C23C14/14

CPC分类号： C23C14/046 ,  C23C14/345 ,  H01J37/321 ,  H01J37/32935 ,  H01J37/3299 ,  H01J37/34 ,  H01L21/2855 ,  H01L21/76843 ,  H01L21/76862 ,  H01L21/76873 ,  H01L2221/1089

摘要： The invention is related to A seed film forming method capable of forming a seed film in recesses without forming overhangs.The seed film forming method of depositing a seed film for plating includes the steps of: producing metal ions by ionizing a metal target with a plasma in a processing vessel that can be evacuated; and depositing a metal film on a surface provided with recesses of a workpiece mounted on a stage placed in the processing vessel by supplying bias power to the workpiece to attract the metal ions to the workpiece; wherein a film deposition step of depositing the metal film by using the bias power determined so that the metal film deposited on the surface of the workpiece may not be sputtered, and a film deposition interrupting step of interrupting the deposition of the metal film by stopping producing the metal ions are repeated alternately by a number of cycles.

摘要翻译： 本发明涉及能够在不形成突出端的情况下在凹陷中形成种子膜的种子膜形成方法。 沉积用于电镀的种子膜的种子膜形成方法包括以下步骤：通过在能够被抽真空的处理容器中用等离子体电离金属靶产生金属离子; 以及通过向所述工件提供偏置功率以将金属离子吸引到所述工件上，在安装在放置在所述处理容器中的工作台上的工件的设置有凹部的表面上沉积金属膜; 其中，通过使用确定为使得沉积在所述工件的表面上的金属膜不会被溅射的偏置功率来沉积所述金属膜的膜沉积步骤，以及通过停止产生来中断所述金属膜的沉积的膜沉积中断步骤 金属离子交替重复多次。

公开(公告)号：US08026176B2

公开(公告)日：2011-09-27

申请号：US12223781

申请日：2007-02-09

申请人： Takashi Sakuma ,  Taro Ikeda ,  Osamu Yokoyama ,  Tsukasa Matsuda ,  Tatsuo Hatano ,  Yasushi Mizusawa

发明人： Takashi Sakuma ,  Taro Ikeda ,  Osamu Yokoyama ,  Tsukasa Matsuda ,  Tatsuo Hatano ,  Yasushi Mizusawa

IPC分类号： H01L21/311

CPC分类号： C23C14/046 ,  H01J37/321 ,  H01J37/34 ,  H01L21/2855 ,  H01L21/76846 ,  H01L21/76877 ,  H01L21/76882 ,  H01L21/76883

摘要： A technique for embedding metal in a microscopic recess provided in the surface of a process object, such as a semiconductor wafer, by plasma sputtering. A film forming step and a diffusion step are alternately performed a plurality of times. The film forming step deposits a small amount of metal film in the recess. The diffusion step moves the deposited metal film towards the bottom portion of the recess. In the film forming step, bias power to be applied to a stage for supporting the wafer is set to a value ensuring that, on the surface of the wafer, the rate of metal deposition due to the drawing-in of metal particles is substantially equal to the rate of the sputter etching by plasma. In the diffusion step, the wafer is maintained at a temperature which permits occurrence of surface diffusion of the metal film deposited in the recess.

摘要翻译： 通过等离子体溅射将金属嵌入设置在处理对象（例如半导体晶片）的表面中的微观凹槽中的技术。 交替进行成膜步骤和扩散步骤。 成膜步骤在凹槽中沉积少量的金属膜。 扩散步骤将沉积的金属膜移向凹部的底部。 在成膜步骤中，施加到用于支撑晶片的载物台的偏置功率被设定为确保在晶片的表面上由于金属颗粒的吸入引起的金属沉积速率基本相等的值 到等离子体的溅射蚀刻速率。 在扩散步骤中，晶片保持在允许沉积在凹槽中的金属膜的表面扩散出现的温度。

公开(公告)号：US08129271B2

公开(公告)日：2012-03-06

申请号：US12374216

申请日：2007-07-17

申请人： Yasuhiko Kojima ,  Taro Ikeda ,  Tatsuo Hatano

发明人： Yasuhiko Kojima ,  Taro Ikeda ,  Tatsuo Hatano

IPC分类号： H01L21/44 ,  C23C16/00

CPC分类号： C23C16/18 ,  H01L21/28556 ,  H01L21/76877 ,  H01L23/53238 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/00

摘要： A film forming method is provided with a substrate placing step wherein a substrate is placed in a process chamber in an airtight status; a first film forming step wherein the process chamber is supplied with water vapor and a material gas including an organic compound of copper, and an adhered layer of copper is formed on the substrate; an exhaust step wherein the water vapor and the material gas in the process chamber are exhausted; and a second film forming step wherein the process chamber is resupplied with only the material gas and a copper film is further formed on the adhered layer.

摘要翻译： 一种成膜方法具有基板放置步骤，其中将基板以气密状态放置在处理室中; 第一成膜步骤，其中处理室被供应水蒸汽和包含铜的有机化合物的原料气体，并且在基板上形成铜的附着层; 排气步骤，其中处理室中的水蒸汽和原料气体被排出; 以及第二成膜步骤，其中处理室仅用原料气体再供给，并且在附着层上进一步形成铜膜。

公开(公告)号：US07790626B2

公开(公告)日：2010-09-07

申请号：US11577505

申请日：2005-10-18

申请人： Taro Ikeda ,  Kenji Suzuki ,  Tatsuo Hatano ,  Yasushi Mizusawa

发明人： Taro Ikeda ,  Kenji Suzuki ,  Tatsuo Hatano ,  Yasushi Mizusawa

IPC分类号： H01L21/00

CPC分类号： H01L21/2855 ,  C23C14/046 ,  C23C14/3471 ,  H01J37/34 ,  H01J2237/3327 ,  H01L21/76844 ,  H01L21/76865 ,  H01L21/76871 ,  H01L21/76876 ,  H01L21/76877 ,  H01L2221/1089

摘要： The present invention relates to a technology for depositing a thin metal film by using a plasma sputtering technique on a top surface of a target object, e.g., a semiconductor wafer or the like, and on a surface of a recess opened at the top surface. The film deposition method is characterized in that a film deposition process to deposit a metal film on a sidewall of the recess by generating metal ions by way of making a metal target sputter with a plasma generated from a discharge gas in the processing container and by applying to the mounting table a bias power to cause a metal film deposition based on a metal ion attraction and a sputter etching based on the plasma generated from the discharge gas simultaneously on the top surface of the target object.

摘要翻译： 本发明涉及通过使用等离子体溅射技术在目标物体（例如半导体晶片等）的顶面上以及在顶面开口的凹部的表面上沉积金属薄膜的技术。 膜沉积方法的特征在于，通过使金属靶溅射在处理容器中由放电气体产生的等离子体溅射金属离子，并且通过应用 在安装台上施加基于金属离子吸引的金属膜沉积和基于从放电气体产生的等离子体在目标物体的顶面上产生的溅射蚀刻的偏置功率。

公开(公告)号：US20090087583A1

公开(公告)日：2009-04-02

申请号：US12226610

申请日：2007-04-10

申请人： Takashi Sakuma ,  Osamu Yokoyama ,  Taro Ikeda ,  Tatsuo Hatano ,  Yasushi Mizusawa

发明人： Takashi Sakuma ,  Osamu Yokoyama ,  Taro Ikeda ,  Tatsuo Hatano ,  Yasushi Mizusawa

IPC分类号： H05H1/24 ,  C23C16/00

CPC分类号： C23C14/046 ,  C23C14/345 ,  C23C14/3471 ,  H01L21/2855 ,  H01L21/76843 ,  H01L21/76873 ,  H01L2221/1089

摘要： An object to be processed (e.g., semiconductor wafer W) having a recess formed in a surface thereof is placed on a stage 34 disposed in a processing vessel 24 capable of being vacuumized. Thereafter, a plasma is generated in the processing vessel 24, so that a metal target 70 is ionized by the plasma to generate metal ions in the processing vessel 24. Then, a thin film is deposited on the surface of the object to be processed including a surface in the recess, by supplying a bias power to the stage 34 so as to draw the metal ions into the object to be processed placed on the stage 34 by the supplied bias power. In the present invention, a wattage of the bias power is varied within a range in which the surface of the object to be processed is not substantially sputtered.

摘要翻译： 将具有在其表面形成的凹部的待处理物体（例如，半导体晶片W）放置在能够被真空化的处理容器24中的台34上。 此后，在处理容器24中产生等离子体，使得金属靶70被等离子体离子化，以在处理容器24中产生金属离子。然后，在待处理物体的表面上沉积薄膜，其中包括 通过向台34提供偏置功率以便通过所提供的偏置功率将金属离子拉入放置在载物台34上的被处理物体中，从而在凹部中的表面。 在本发明中，偏置功率的功率在被处理物体的表面基本上不被溅射的范围内变化。

公开(公告)号：US08029873B2

公开(公告)日：2011-10-04

申请号：US11922918

申请日：2006-06-28

申请人： Taro Ikeda ,  Yasushi Mizusawa ,  Tatsuo Hatano ,  Osamu Yokoyama ,  Takashi Sakuma

发明人： Taro Ikeda ,  Yasushi Mizusawa ,  Tatsuo Hatano ,  Osamu Yokoyama ,  Takashi Sakuma

IPC分类号： H05H1/24 ,  C23C16/00

CPC分类号： C23C14/046 ,  C23C14/345 ,  C23C14/3471 ,  H01J37/321 ,  H01L21/2855 ,  H01L21/76805 ,  H01L21/76814 ,  H01L21/76843 ,  H01L21/76844

摘要： The present invention is a film deposition method of a metal film comprising the steps of: placing an object to be processed having a recess formed in a surface thereof, on a stage in a processing vessel; evacuating the processing vessel to create a vacuum therein; ionizing a metal target in the evacuated processing vessel to generate metal particles including metal ions, by means of a plasma formed by making the plasma from an inert gas; and by applying a bias electric power to the object to be processed placed on the stage to draw the plasma and the metal particles into the object to be processed, scraping a bottom part of the recess to form a scraped recess, and depositing a metal film on an entire surface of the object to be processed including surfaces in the recess and in the scraped recess.

摘要翻译： 本发明是一种金属膜的成膜方法，包括以下步骤：将处理容器内的台阶上形成有凹部的被处理物放置在其表面; 抽出处理容器以在其中产生真空; 在真空处理容器中电离金属靶，通过由惰性气体制备等离子体形成的等离子体产生包含金属离子的金属颗粒; 并且通过向被放置在台架上的待加工物体施加偏置电力，以将等离子体和金属颗粒拉入待加工物体，刮掉凹部的底部以形成刮削凹部，并且沉积金属膜 在待处理物体的整个表面上，包括凹部和刮削凹槽中的表面。

公开(公告)号：US20100015799A1

公开(公告)日：2010-01-21

申请号：US12374228

申请日：2007-06-15

申请人： Yasuhiko Kojima ,  Taro Ikeda ,  Tatsuo Hatano

发明人： Yasuhiko Kojima ,  Taro Ikeda ,  Tatsuo Hatano

IPC分类号： H01L21/3205 ,  C23C16/54

CPC分类号： H01L21/28556 ,  C23C16/0281 ,  C23C16/18 ,  H01L21/76843 ,  H01L21/76855 ,  H01L21/76858 ,  H01L21/76867 ,  H01L21/76877

摘要： A semiconductor device, which suppresses formation of an organic impurity layer and has excellent adhesiveness to a copper film and a metal to be a base, is manufactured. A substrate (wafer W) coated with a barrier metal layer (base film) 13 formed of a metal having a high oxidation tendency, such as titanium, is placed in a processing chamber. At the time of starting to supply water vapor or after that, a material gas containing an organic compound of copper (for instance, Cu(hfac)TMVS) is supplied, and a copper film is formed on the surface of the barrier metal layer 13 whereupon the oxide layer 13a is formed by the water vapor. Then, heat treatment is performed on the wafer W, and the oxide layer 13a is converted into an alloy layer 13b of a metal and copper which constitute the barrier metal layer 13.

摘要翻译： 制造抑制有机杂质层的形成并且对铜膜和作为基底的金属具有优异的粘附性的半导体器件。 涂覆有由氧化倾向高的金属形成的阻挡金属层（基膜）13的基板（晶片W）如钛，被放置在处理室中。 在开始供给水蒸气之后，供给包含铜有机化合物（例如Cu（hfac）TMVS）的原料气体，并且在阻挡金属层13的表面上形成铜膜 于是氧化物层13a由水蒸汽形成。 然后，对晶片W进行热处理，将氧化物层13a转换成构成阻挡金属层13的金属和铜的合金层13b。