发明授权
- 专利标题: Flip-chip light emitting diode and fabricating method thereof
- 专利标题(中): 倒装芯片发光二极管及其制造方法
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申请号: US11142082申请日: 2005-05-31
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公开(公告)号: US07067340B1公开(公告)日: 2006-06-27
- 发明人: Tzong-Liang Tsai , Chih-Sung Chang , Tzer-Perng Chen
- 申请人: Tzong-Liang Tsai , Chih-Sung Chang , Tzer-Perng Chen
- 申请人地址: TW Hsinchu
- 专利权人: Epistar Corporation
- 当前专利权人: Epistar Corporation
- 当前专利权人地址: TW Hsinchu
- 代理机构: Ingrassia Fisher & Lorenz
- 优先权: TW94104049A 20050205
- 主分类号: H01L21/66
- IPC分类号: H01L21/66
摘要:
A flip-chip light emitting diode and fabricating methods are disclosed. A soft transparent adhesive layer is utilized to past a transparent conductive substrate onto a light emitting diode epitaxy structure on a substrate, and the substrate is next removed entirely. Then, a mesa-etching process is performed to form a first top surface and a second top surface on the light emitting diode epitaxy structure for respectively exposing an n-type layer and a p-type layer in the light emitting diode epitaxy structure. Next, a metal reflective layer and a barrier layer are formed on the light emitting diode epitaxy structure in turn, and electrodes are finally fabricated on the barrier layer.
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