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1.发明申请Light emitting diode with enhanced luminance and method for manufacturing the same 审中-公开具有增强亮度的发光二极管及其制造方法公开(公告)号：US20050253129A1
公开(公告)日：2005-11-17
申请号：US10949456
申请日：2004-09-23
CPC分类号： H01L33/46 , H01L33/0079
摘要： A light emitting diode with enhanced luminance and a method for manufacturing the light emitting diode are provided. The light emitting diode includes a substrate, a passivation layer including a material selected from a group consisting of a metal alloy, a metal oxide, a metal nitride, organic materials, inorganic materials and a combination thereof, a reflection layer, a first semiconductor layer, a multi-layer quantum well structure and a second semiconductor layer. The substrate possesses excellent electric/thermal conductivities.
摘要翻译： 提供具有增强亮度的发光二极管和制造发光二极管的方法。 发光二极管包括基板，包括选自金属合金，金属氧化物，金属氮化物，有机材料，无机材料及其组合的材料的钝化层，反射层，第一半导体层 ，多层量子阱结构和第二半导体层。 该基板具有优异的电/热导率。
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公开(公告)号：US20050093002A1
公开(公告)日：2005-05-05
申请号：US10695807
申请日：2003-10-30
CPC分类号： H01L33/387 , H01L33/42
摘要： A light emitting diode device and method of manufacturing comprises a light-transmission conductive layer and a patterned transparent conductive layer. In accordance with the present invention, the light-transmission conductive layer and the patterned transparent conductive layer is spread optimal area above the LED device so as to enhance the transparency and ohmic property of LED device.
摘要翻译： 发光二极管器件及其制造方法包括透光导电层和图案化的透明导电层。 根据本发明，透光导电层和图案化的透明导电层在LED器件上方扩展到最佳区域，以提高LED器件的透明度和欧姆性能。
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公开(公告)号：US06781160B1
公开(公告)日：2004-08-24
申请号：US10603378
申请日：2003-06-24
IPC分类号： H01L2922
CPC分类号： H01L33/22
摘要： A semiconductor light emitting device and a method for manufacturing the same are disclosed. The semiconductor comprises a light scattering-deflecting layer located on a semiconductor layer having a scraggly surface. Light is deflected due to the difference of refractive index when the light enters the semiconductor layer from the light scattering-deflecting layer, and the light scatters when the light enters the scraggly surface of the semiconductor layer, thereby enabling the semiconductor light emitting device to emit more light so as to increase the light emitting efficiency of the semiconductor light emitting device.
摘要翻译： 公开了一种半导体发光器件及其制造方法。 该半导体包括位于具有划痕表面的半导体层上的光散射偏转层。 当光从光散射偏转层进入半导体层时，光由于折射率的差异而偏转，并且当光进入半导体层的锯齿状表面时，光散射，从而使得半导体发光器件能够发射 更多的光以增加半导体发光器件的发光效率。
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公开(公告)号：US06921924B2
公开(公告)日：2005-07-26
申请号：US10463393
申请日：2003-06-18
摘要： A method for manufacturing a semiconductor light-emitting device. The semiconductor light-emitting device has a substrate, and a semiconductor layer, a n-type semiconductor layer, and a p-type semiconductor layer successively formed atop the substrate. The method forms an intermediate layer having a predetermined pattern between the substrate and the semiconductor layer, or between the semiconductor layer and the n-type semiconductor layer, or between the n-type semiconductor layer and the p-type semiconductor layer. The p-type semiconductor layer has an uneven top layer due to the intermediate layer having a predetermined pattern and the total internal reflection of the LED can be reduced. The intermediate layer is a conductive material to reduce serial resistance of the LED.
摘要翻译： 一种半导体发光器件的制造方法。 半导体发光器件具有在衬底上依次形成的衬底和半导体层，n型半导体层和p型半导体层。 该方法在衬底和半导体层之间，或者在半导体层和n型半导体层之间或在n型半导体层和p型半导体层之间形成具有预定图案的中间层。 由于具有预定图案的中间层，p型半导体层具有不均匀的顶层，并且可以减少LED的全内反射。 中间层是降低LED串联电阻的导电材料。
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公开(公告)号：US20050156183A1
公开(公告)日：2005-07-21
申请号：US10906045
申请日：2005-02-01
CPC分类号： H01L33/405 , H01L33/04 , H01L33/105
摘要： The present invention discloses a light-emitting device that has a substrate, an n-type electrode, an active layer, a p-type semiconductor layer, a reflecting layer, and a p-type electrode. The n-type electrode is located on the bottom surface of the substrate and the active layer is located on a top surface of the substrate. The p-type semiconductor layer covers the active layer. The reflecting layer is located on the p-type semiconductor layer and covered by the p-type electrode and has an area not less than the area of the p-type electrode and not more than a half of the area of the p-type semiconductor layer. The reflecting layer is a conductive layer with high reflectivity, and is formed under the p-type electrode to reflect light from the active layer, avoiding light of the light-emitting device being absorbed by the metal electrode.
摘要翻译： 本发明公开了一种具有基板，n型电极，有源层，p型半导体层，反射层和p型电极的发光装置。 n型电极位于衬底的底表面上，有源层位于衬底的顶表面上。 p型半导体层覆盖有源层。 反射层位于p型半导体层上，由p型电极覆盖，面积不小于p型电极的面积，不超过p型半导体的面积的一半 层。 反射层是具有高反射率的导电层，并且形成在p型电极下方以反射来自有源层的光，避免了发光器件被金属电极吸收的光。
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公开(公告)号：US20050072968A1
公开(公告)日：2005-04-07
申请号：US10605539
申请日：2003-10-06
CPC分类号： H01L33/405 , H01L33/04 , H01L33/105
摘要： The present invention discloses a light-emitting device that has a substrate, an n-type electrode, an active layer, a p-type semiconductor layer, a reflective layer, and a p-type electrode. The n-type electrode is located on the bottom surface of the substrate and the active layer is located on a top surface of the substrate. The p-type semiconductor layer covers the active layer. The reflective layer is located on the p-type semiconductor layer, and the p-type electrode covers the reflective layer. The reflective layer is a conductive layer with high reflectivity, and is formed under the p-type electrode to avoid light of the light-emitting device being absorbed by the metal electrode.
摘要翻译： 本发明公开了一种具有基板，n型电极，有源层，p型半导体层，反射层和p型电极的发光装置。 n型电极位于衬底的底表面上，有源层位于衬底的顶表面上。 p型半导体层覆盖有源层。 反射层位于p型半导体层上，p型电极覆盖反射层。 反射层是具有高反射率的导电层，并且形成在p型电极之下，以避免发光器件被金属电极吸收的光。
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公开(公告)号：US07067340B1
公开(公告)日：2006-06-27
申请号：US11142082
申请日：2005-05-31
IPC分类号： H01L21/66
CPC分类号： H01L33/0079 , H01L33/62 , H01L2224/05001 , H01L2224/05023 , H01L2224/05124 , H01L2224/05139 , H01L2224/05144 , H01L2224/05155 , H01L2224/05169 , H01L2224/05184 , H01L2224/05568 , H01L2224/16 , H01L2924/00014 , H01L2224/05541 , H01L2224/05005 , H01L2224/05599
摘要： A flip-chip light emitting diode and fabricating methods are disclosed. A soft transparent adhesive layer is utilized to past a transparent conductive substrate onto a light emitting diode epitaxy structure on a substrate, and the substrate is next removed entirely. Then, a mesa-etching process is performed to form a first top surface and a second top surface on the light emitting diode epitaxy structure for respectively exposing an n-type layer and a p-type layer in the light emitting diode epitaxy structure. Next, a metal reflective layer and a barrier layer are formed on the light emitting diode epitaxy structure in turn, and electrodes are finally fabricated on the barrier layer.
摘要翻译： 公开了一种倒装芯片发光二极管及其制造方法。 使用柔软的透明粘合剂层通过透明导电衬底到衬底上的发光二极管外延结构上，然后完全去除衬底。 然后，进行台面蚀刻工艺以在发光二极管外延结构上形成第一顶表面和第二顶表面，以分别暴露发光二极管外延结构中的n型层和p型层。 接下来，依次在发光二极管外延结构上形成金属反射层和阻挡层，最后在阻挡层上制造电极。
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公开(公告)号：US07012281B2
公开(公告)日：2006-03-14
申请号：US10695807
申请日：2003-10-30
CPC分类号： H01L33/387 , H01L33/42
摘要： A light emitting diode device and method of manufacturing comprises a light-transmission conductive layer and a patterned transparent conductive layer. In accordance with the present invention, the light-transmission conductive layer and the patterned transparent conductive layer is spread optimal area above the LED device so as to enhance the transparency and ohmic property of LED device.
摘要翻译： 发光二极管器件及其制造方法包括透光导电层和图案化的透明导电层。 根据本发明，透光导电层和图案化的透明导电层在LED器件上方扩展到最佳区域，以提高LED器件的透明度和欧姆性能。
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公开(公告)号：US20050014303A1
公开(公告)日：2005-01-20
申请号：US10788378
申请日：2004-03-01
摘要： A method for manufacturing a semiconductor light-emitting device. The semiconductor light-emitting device has a substrate, and a semiconductor layer, a n-type semiconductor layer, and a p-type semiconductor layer successively formed atop the substrate. The method forms an intermediate layer having a predetermined pattern between the substrate and the semiconductor layer, or between the semiconductor layer and the n-type semiconductor layer, or between the n-type semiconductor layer and the p-type semiconductor layer. The p-type semiconductor layer has an uneven top layer due to the intermediate layer having a predetermined pattern and the total internal reflection of the LED can be reduced. The intermediate layer is a conductive material to reduce serial resistance of the LED.
摘要翻译： 一种半导体发光器件的制造方法。 半导体发光器件具有在衬底上依次形成的衬底和半导体层，n型半导体层和p型半导体层。 该方法在衬底和半导体层之间，或者在半导体层和n型半导体层之间或在n型半导体层和p型半导体层之间形成具有预定图案的中间层。 由于具有预定图案的中间层，p型半导体层具有不均匀的顶层，并且可以减少LED的全内反射。 中间层是降低LED串联电阻的导电材料。
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10.发明申请Compound, phosphor composition and light-emitting device containing the same 审中-公开化合物，荧光体组合物和含有它们的发光装置公开(公告)号：US20070034834A1
公开(公告)日：2007-02-15
申请号：US11164018
申请日：2005-11-07
申请人： Yu-Huan Liu , Ru-Shi Liu , Yi-Shan Lin , Chuen-Ming Gee , Ching-Jang Lin , Biing-Jyh Weng , Tzong-Liang Tsai , Tzer-Perng Chen
发明人： Yu-Huan Liu , Ru-Shi Liu , Yi-Shan Lin , Chuen-Ming Gee , Ching-Jang Lin , Biing-Jyh Weng , Tzong-Liang Tsai , Tzer-Perng Chen
CPC分类号： C09K11/7734 , C09K11/0883 , H01L33/502
摘要： A compound represented by the following formula: SrxMyAlzSi12−zN16−zO2+z wherein, M is selected from the group consisting of rare earth elements and yttrium, x>0, y>0, x+y=2, and 0≦z≦5. The compound may be used as a phosphor. It emits a visible light upon being excited by a blue light and/or an ultra-violet light. When M is Eu, the compound emits a yellow-green light upon being excited by a blue light and/or an ultra-violet light.
摘要翻译： 由下式表示的化合物：<？in-line-formula description =“In-line Formulas”end =“lead”？> Sr M α2-z N 2 -Z 2 -Z 2 -Z-α-in-line-formula description =“ 其中，M选自稀土元素和钇，x> 0，y> 0，x + y = 2，0 <= z <= 5 。 该化合物可以用作荧光体。 当被蓝光和/或紫外线激发时，它发出可见光。 当M为Eu时，由蓝色光和/或紫外线激发时，该化合物发出黄绿色光。
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