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US07071031B2 Three-dimensional integrated CMOS-MEMS device and process for making the same
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三维集成CMOS-MEMS器件及其制造方法
- 专利标题： Three-dimensional integrated CMOS-MEMS device and process for making the same
- 专利标题（中）： 三维集成CMOS-MEMS器件及其制造方法
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申请号： US10446461申请日： 2003-05-28
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公开(公告)号： US07071031B2公开(公告)日： 2006-07-04
- 发明人: H. Bernhard Pogge , Michel Despont , Ute Drechsler , Peter Vettiger , Roy Yu
- 申请人： H. Bernhard Pogge , Michel Despont , Ute Drechsler , Peter Vettiger , Roy Yu
- 申请人地址： US NY Armonk
- 专利权人： International Business Machines Corporation
- 当前专利权人： International Business Machines Corporation
- 当前专利权人地址： US NY Armonk
- 代理商 Ira D. Blecker
- 主分类号： H01L21/44
- IPC分类号： H01L21/44 ; H01L21/48 ; H01L21/50
摘要：
A vertically integrated structure includes a micro-electromechanical system (MEMS) and a chip for delivering signals to the MEMS. The structure includes a metal stud connecting a surface of the chip and the MEMS; the MEMS has an anchor portion having a conducting pad on an underside thereof contacting the metal stud. The MEMS is spaced from the chip by a distance corresponding to a height of the metal stud, and the MEMS includes a doped region in contact with the conducting pad. In particular, the MEMS may include a cantilever structure, with the end portion including a tip extending in the vertical direction. A support structure (e.g. of polyimide) may surround the metal stud and contact both the underside of the MEMS and the surface of the chip. A temporary carrier plate is used to facilitate handling of the MEMS and alignment to the chip.
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