发明授权
US07071516B2 Semiconductor device and driving circuit for semiconductor device
有权
用于半导体器件的半导体器件和驱动电路
- 专利标题： Semiconductor device and driving circuit for semiconductor device
- 专利标题（中）： 用于半导体器件的半导体器件和驱动电路
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申请号： US10866677申请日： 2004-06-15
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公开(公告)号： US07071516B2公开(公告)日： 2006-07-04
- 发明人: Tomohide Terashima
- 申请人： Tomohide Terashima
- 申请人地址： JP Tokyo
- 专利权人： Mitsubishi Denki Kabushiki Kaisha
- 当前专利权人： Mitsubishi Denki Kabushiki Kaisha
- 当前专利权人地址： JP Tokyo
- 代理机构： Oblon, Spivak, McClelland, Maier & Neustadt, P.C.
- 优先权： JP2003-344314 20031002
- 主分类号： H01L29/76
- IPC分类号： H01L29/76 ; H01L29/94 ; H01L31/062 ; H01L31/113 ; H01L31/119
摘要：
A PMOS transistor (Q2) provided for developing a short circuit between the base and emitter of an N-type IGBT during turn-OFF includes a P diffusion region (5), a P diffusion region (6), and a conductive film (10) and a second gate electrode (15) provided via a gate oxide film (21) on a surface of an N− epitaxial layer (2) between the P diffusion regions (5 and 6). The gate oxide film (21) is formed in a thickness having a gate breakdown voltage higher than the element breakdown voltage of a typical field oxide film and the like.