发明授权
- 专利标题： Self-aligned semiconductor contact structures and methods for fabricating the same
-
申请号： US10695061申请日： 2003-10-28
-
公开(公告)号： US07071517B2公开(公告)日： 2006-07-04
- 发明人: Seong-Ho Kim , Dong-Gun Park , Chang-Sub Lee , Jeong-Dong Choe , Sung-Min Kim , Shin-Ae Lee
- 申请人： Seong-Ho Kim , Dong-Gun Park , Chang-Sub Lee , Jeong-Dong Choe , Sung-Min Kim , Shin-Ae Lee
- 申请人地址： KR
- 专利权人： Samsung Electronics Co., Ltd.
- 当前专利权人： Samsung Electronics Co., Ltd.
- 当前专利权人地址： KR
- 代理机构： Myers Bigel Sibley & Sajovec PA
- 优先权： KR10-2002-0066874 20021031
- 主分类号： H01L29/41
- IPC分类号： H01L29/41
摘要：
A self-aligned contact structure and a method of forming the same include selected neighboring gate electrodes with adjacent sidewalls that are configured to angle toward each other. The angled surfaces of the gate electrodes can be protected using a liner layer that can extend the length of the contact window to define the sidewalls of the contact window.