发明授权
- 专利标题: Methods for imperfect insulating film electrical thickness/capacitance measurement
- 专利标题(中): 绝缘膜电气厚度/电容测量不完美的方法
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申请号: US10754332申请日: 2004-01-09
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公开(公告)号: US07075318B1公开(公告)日: 2006-07-11
- 发明人: Xiafang (Michelle) Zhang , Zhiwei (Steve) Xu , Jianou Shi , Bao Vu , Thomas G. Miller , Gregory S. Horner
- 申请人: Xiafang (Michelle) Zhang , Zhiwei (Steve) Xu , Jianou Shi , Bao Vu , Thomas G. Miller , Gregory S. Horner
- 申请人地址: US CA Milpitas
- 专利权人: KLA-Tencor Technologies Corp.
- 当前专利权人: KLA-Tencor Technologies Corp.
- 当前专利权人地址: US CA Milpitas
- 代理机构: Daffer McDaniel, LLP
- 代理商 Ann Marie Mewherter
- 主分类号: G01R31/302
- IPC分类号: G01R31/302 ; G01R27/26
摘要:
Methods for determining an electrical parameter of an insulating film are provided. One method includes measuring a surface potential of a leaky insulating film without inducing leakage across the insulating film and determining the electrical parameter from the surface potential. Another method includes applying an electrical field across the insulating film. Leakage across the insulating film caused by the electrical field is negligible. The method also includes measuring a surface potential of the specimen and determining a potential of the substrate. In addition, the method includes determining a pure voltage across the insulating film from the surface potential and the substrate potential. The method further includes determining the electrical parameter from the pure voltage. The electrical parameter may be capacitance or electrical thickness of the insulating film.
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