- 专利标题: NFET and PFET devices and methods of fabricating same
-
申请号: US10711453申请日: 2004-09-20
-
公开(公告)号: US07078722B2公开(公告)日: 2006-07-18
- 发明人: Brent A. Anderson , Louis D. Lanzerotti , Edward J. Nowak
- 申请人: Brent A. Anderson , Louis D. Lanzerotti , Edward J. Nowak
- 申请人地址: US NY Armonk
- 专利权人: International Business Machines Corporation
- 当前专利权人: International Business Machines Corporation
- 当前专利权人地址: US NY Armonk
- 代理机构: Schmeiser, Olsen & Watts
- 代理商 William D. Sabo
- 主分类号: H01L29/76
- IPC分类号: H01L29/76
摘要:
A field effect transistor and method of fabricating the field effect transistor. The field effect transistor, including: a gate electrode formed on a top surface of a gate dielectric layer, the gate dielectric layer on a top surface of a single-crystal silicon channel region, the single-crystal silicon channel region on a top surface of a Ge including layer, the Ge including layer on a top surface of a single-crystal silicon substrate, the Ge including layer between a first dielectric layer and a second dielectric layer on the top surface of the single-crystal silicon substrate.
公开/授权文献
- US20060060856A1 HIGH-MOBILITY BULK SILICON PFET 公开/授权日:2006-03-23