A method of controlling a MOS-type photodetector includes transferring electrical charge between a photodiode (12) and a sensing node (3) via a transfer transistor. The electrical potential of the sensing node (3) takes an extreme value when a maximum quantity of electrical charge is stored on the sensing node (3). During the electrical charge transfer, an electrical potential is applied to the gate electrode of a transfer transistor in such a way that the electrical potential of the channel (2) of the transfer transistor is brought to a value equal to the extreme value of the electrical potential of the sensing node (3) multiplied by a number greater than or equal to unity.