公开(公告)号：US09681077B2

公开(公告)日：2017-06-13

申请号：US13546882

申请日：2012-07-11

Applicant: Cedric Tubert ,  Francois Roy ,  Pascal Mellot

Inventor： Cedric Tubert ,  Francois Roy ,  Pascal Mellot

IPC: H01L29/06 ,  H04N5/372

CPC classification number: H04N5/372 ,  H01L29/06 ,  H01L29/0603

Abstract: A device for transferring charges photogenerated in a portion of a semiconductor layer delimited by at least two parallel trenches, each trench including, lengthwise, at least a first and a second conductive regions insulated from each other and from the semiconductor layer, including the repeating of a first step of biasing of the first conductive regions to a first voltage to form a volume accumulation of holes in the area of this portion located between the first regions, while the second conductive regions are biased to a second voltage greater than the first voltage, and of a second step of biasing of the first regions to the second voltage and of the second regions to the first voltage.

公开(公告)号：US09099366B2

公开(公告)日：2015-08-04

申请号：US13529045

申请日：2012-06-21

Applicant: Francois Roy ,  Julien Michelot

Inventor： Francois Roy ,  Julien Michelot

IPC: H01L27/146 ,  H01L31/0352

CPC classification number: H01L27/14603 ,  H01L27/14607 ,  H01L27/1461 ,  H01L27/1463 ,  H01L27/14638 ,  H01L27/1464 ,  H01L31/0352

Abstract: A photosite is formed in a semiconductor substrate and includes a photodiode confined in a direction orthogonal to the surface of the substrate. The photodiode includes a semiconductor zone for storing charge that is formed in an upper semiconductor region having a first conductivity type and includes a main well of a second conductivity type opposite the first conductivity type and laterally pinned in a first direction parallel to the surface of the substrate. The photodiode further includes an additional semiconductor zone including an additional well having the second conductivity type that is buried under and makes contact with the main well.

Abstract translation: 在半导体衬底中形成有一个光电子结构，并包括一个限制在与衬底表面正交的方向上的光电二极管。 光电二极管包括用于存储形成在具有第一导电类型的上半导体区域中的电荷的半导体区，并且包括与第一导电类型相反的第二导电类型的主阱，并且在与第一导电类型的表面平行的第一方向上横向固定 基质。 光电二极管还包括另外的半导体区域，该半导体区域包括具有第二导电类型的另外的阱，该第二导电类型被埋在主阱中并与主阱接触。

公开(公告)号：US20130015910A1

公开(公告)日：2013-01-17

申请号：US13546882

申请日：2012-07-11

Applicant: Cedric Tubert ,  Francois Roy ,  Pascal Mellot

Inventor： Cedric Tubert ,  Francois Roy ,  Pascal Mellot

IPC: H01L31/02 ,  H03K3/01

CPC classification number: H04N5/372 ,  H01L29/06 ,  H01L29/0603

Abstract: A device for transferring charges photogenerated in a portion of a semiconductor layer delimited by at least two parallel trenches, each trench including, lengthwise, at least a first and a second conductive regions insulated from each other and from the semiconductor layer, including the repeating of a first step of biasing of the first conductive regions to a first voltage to form a volume accumulation of holes in the area of this portion located between the first regions, while the second conductive regions are biased to a second voltage greater than the first voltage, and of a second step of biasing of the first regions to the second voltage and of the second regions to the first voltage.

Abstract translation: 一种用于转移在由至少两个平行沟槽限定的半导体层的一部分中产生的电荷的装置，每个沟槽包括彼此绝缘的半导体层的纵向至少第一和第二导电区域，包括重复 将第一导电区域偏压到第一电压的第一步骤，以在位于第一区域之间的该部分的区域中形成孔的体积积累，而第二导电区域被偏压到大于第一电压的第二电压， 以及将第一区域偏置到第二电压和第二区域到第一电压的第二步骤。

公开(公告)号：US20120306035A1

公开(公告)日：2012-12-06

申请号：US13483274

申请日：2012-05-30

Applicant: Francois Roy ,  Francois Leverd ,  Jens Prima

Inventor： Francois Roy ,  Francois Leverd ,  Jens Prima

IPC: H01L27/146 ,  H01L31/18

CPC classification number: H01L27/14632 ,  H01L27/1464 ,  H01L27/14643 ,  H01L27/14689

Abstract: An integrated imaging device includes a silicon layer provided over a dielectric multilayer. The dielectric multilayer includes a top silicon-dioxide layer, an intermediate silicon-nitride layer and a bottom silicon-dioxide layer. Imaging circuitry is formed at a frontside of the silicon layer. An isolating structure surrounds the imaging circuitry and extends from the frontside through the silicon layer and top silicon-dioxide layer into and terminating within the intermediate silicon-nitride layer. A filter for the imaging circuitry is mounted to a backside of the bottom silicon-dioxide layer. The isolating structure is formed by a trench filled with a dielectric material.

Abstract translation: 集成成像装置包括设置在电介质多层上的硅层。 电介质层包括顶部二氧化硅层，中间氮化硅层和底部二氧化硅层。 成像电路形成在硅层的前侧。 隔离结构围绕成像电路并从前侧穿过硅层和顶部二氧化硅层延伸到中间氮化硅层内并终止于中间氮化硅层内。 用于成像电路的滤光器安装在底部二氧化硅层的背面。 隔离结构由填充有电介质材料的沟槽形成。

公开(公告)号：US20120211804A1

公开(公告)日：2012-08-23

申请号：US13398287

申请日：2012-02-16

Applicant: Julien MICHELOT ,  Francois Roy ,  Frederic Lalanne

Inventor： Julien MICHELOT ,  Francois Roy ,  Frederic Lalanne

IPC: H01L31/02

CPC classification number: H01L27/14609 ,  H01L27/14603 ,  H01L27/1461 ,  H01L27/14641 ,  H01L27/14643

Abstract: A photosite may include, in a semi-conductor substrate, a photodiode pinched in the direction of the depth of the substrate including a charge storage zone, and a charge transfer transistor to transfer the stored charge. The charge storage zone may include a pinching in a first direction passing through the charge transfer transistor defining a constriction zone adjacent to the charge transfer transistor.

Abstract translation: 光电晶体可以在半导体衬底中包括在包括电荷存储区的衬底的深度方向上夹持的光电二极管以及用于传送存储的电荷的电荷转移晶体管。 电荷存储区可以包括在通过电荷转移晶体管的第一方向上的夹持，所述电荷转移晶体管限定与电荷转移晶体管相邻的收缩区。

公开(公告)号：US08183517B2

公开(公告)日：2012-05-22

申请号：US12798977

申请日：2010-04-15

Applicant: Francois Roy ,  Thomas Girault

Inventor： Francois Roy ,  Thomas Girault

IPC: G02B27/10

CPC classification number: H01L27/14625 ,  G02B6/12004 ,  G02B6/1228 ,  G02B6/136 ,  G02B6/4298 ,  H01L27/14627 ,  H01L27/14643 ,  H01L27/14685

Abstract: An integrated circuit having a photosensitive cell with an entry face, a photosensitive element and at least two elements forming a light guide and placed between the entry face and the photosensitive element. The second element is located between the first element and the entry face such that the two elements guide the light coming from the entry face onto the photosensitive element and each element forms a light guide. The inner volume has a first surface located on the same side as the photosensitive element, a second surface located on the same side as the entry face, and a lateral surface joining said first surface to said second surface and separating the inner volume from the outer volume. The first surface of the inner volume of the second element has a smaller area than that of the second surface of the inner volume of the first element.

Abstract translation: 一种集成电路，其具有具有入射面的感光单元，感光元件和至少两个元件，形成光导并且放置在入射面和感光元件之间。 第二元件位于第一元件和入口面之间，使得两个元件将来自入口面的光引导到感光元件上，并且每个元件形成光导。 内部体积具有位于与感光元件相同侧的第一表面，位于与入射面相同侧的第二表面，以及将所述第一表面连接到所述第二表面的侧表面，并将内部体积与外部 卷。 第二元件的内部体积的第一表面具有比第一元件的内部容积的第二表面的面积小的面积。

公开(公告)号：US20080179494A1

公开(公告)日：2008-07-31

申请号：US12006097

申请日：2007-12-28

Applicant: Arnaud Tournier ,  Francois Roy

Inventor： Arnaud Tournier ,  Francois Roy

IPC: H01L27/146 ,  H01L31/18

CPC classification number: H01L27/14654 ,  H01L27/14601 ,  H01L27/14689

Abstract: A pixel is formed in a semiconductor substrate of a first doping type, a first layer of the second doping type covering the substrate, a second layer of the first doping type covering the first layer. A MOS-type transistor is formed in the second layer and has a drain area and a source area of the second doping type. The pixel includes a first area of the second doping type, more heavily doped than the first layer, crossing the second layer and extending into the first layer and connected to the drain area. The pixel further includes a second area of the first doping type, more heavily doped than the second layer and bordering the source area.

Abstract translation: 像素形成在第一掺杂型的半导体衬底中，覆盖衬底的第二掺杂类型的第一层，覆盖第一层的第一掺杂类型的第二层。 在第二层中形成MOS型晶体管，并具有第二掺杂类型的漏极区域和源极区域。 像素包括第二掺杂类型的第一区域，比第一层更重掺杂，与第二层交叉并延伸到第一层并连接到漏极区域。 像素还包括第一掺杂类型的第二区域，比第二层更重掺杂并且与源极区域接壤。

公开(公告)号：US20070147740A1

公开(公告)日：2007-06-28

申请号：US11605832

申请日：2006-11-28

Applicant: Francois Roy ,  Tarek Lule

Inventor： Francois Roy ,  Tarek Lule

IPC: G02B6/40

CPC classification number: H01L27/14685 ,  H01L27/14621

Abstract: The disclosure relates to an integrated circuit comprising at least one photosensitive cell. The cell includes a photosensitive element, an input face associated with the said photosensitive element, an optical filter situated in at least one optical path leading to the photosensitive element and an interconnection part situated between the photosensitive element and the input face. The optical filter is disposed between the photosensitive element and the surface of the interconnection part closest to the input face. In particular, the optical filter can be disposed within the interconnection part. The disclosure also proposes that the filter be formed using a glass comprising cerium sulphide or at least one metal oxide.

Abstract translation: 本公开涉及包括至少一个感光单元的集成电路。 单元包括感光元件，与所述感光元件相关联的输入面，位于通向感光元件的至少一个光路中的光学滤光器和位于感光元件和输入面之间的互连部件。 光学滤光器设置在感光元件和最靠近输入面的互连部件的表面之间。 特别地，滤光器可以布置在互连部分内。 本公开还提出使用包含硫化铈或至少一种金属氧化物的玻璃来形成过滤器。

公开(公告)号：US20050006677A1

公开(公告)日：2005-01-13

申请号：US10875694

申请日：2004-06-24

Applicant: Francois Roy

Inventor： Francois Roy

IPC: H01L21/00 ,  H01L27/146 ,  H01L31/0328 ,  H01L31/11

CPC classification number: H01L31/11 ,  H01L27/1463 ,  H01L27/14643 ,  H01L27/14656

Abstract: A photodiode comprises three superposed doped regions, namely a first doped region adjacent to a surface (S) of a semiconductor substrate, an intermediate second doped region and a third doped region in contact with the bulk of the substrate. The bulk of the substrate and the second doped region form first and second electrodes of the photodiode, respectively. The photodiode furthermore includes a third electrode in contact with the first doped region. The third electrode comprises an intermediate portion of a first electrically conducting material, placed in contact with the first doped region, and an external connection portion of a second electrically conducting material, placed in contact with the intermediate portion.

Abstract translation: 光电二极管包括三个叠加的掺杂区域，即与半导体衬底的表面（S）相邻的第一掺杂区域，与衬底本体接触的中间第二掺杂区域和第三掺杂区域。 基板和第二掺杂区域的主体分别形成光电二极管的第一和第二电极。 光电二极管还包括与第一掺杂区域接触的第三电极。 第三电极包括与第一掺杂区域接触放置的第一导电材料的中间部分和与中间部分接触放置的第二导电材料的外部连接部分。

公开(公告)号：US5759623A

公开(公告)日：1998-06-02

申请号：US527900

申请日：1995-09-14

Applicant: Carlos Fernando De Mello Borges ,  Michel Moisan ,  Francois Roy

Inventor： Carlos Fernando De Mello Borges ,  Michel Moisan ,  Francois Roy

IPC: C23C8/80 ,  C23C16/02 ,  C23C16/27 ,  C23C26/00 ,  C23C16/26 ,  B05D3/00

CPC classification number: C23C16/275 ,  C23C16/0218 ,  C23C26/00 ,  C23C8/80

Abstract: A method for depositing a thin film of diamond on the surface of a Fe-based substrate comprises the step of pre-treating the surface of the Fe-based substrate prior to the deposition consisting of nucleating carbon atoms on the Fe-based substrate to grow the thin film of diamond. The pre-treatment consists of supersaturating the surface of the Fe-based substrate with carbon atoms and heating it to form a diffusion barrier layer. During the pre-treatment, at least a portion of the carbon atoms are diffused into the Fe-based substrate. During the deposition process, carbon atoms are prevented by the diffusion barrier layer previously formed to diffuse into the Fe-based substrate whereby these carbon atoms remain available for the nucleation and growth of the thin film of diamond. A portion of the carbon atoms diffused into the Fe-based substrate during the pre-treatment are nucleated during the deposition process and act as anchors to provide a high adhesion between the thin film of diamond and the surface of the Fe-based substrate.

Abstract translation: 用于在Fe基基材的表面上沉积金刚石薄膜的方法包括在沉积前由Fe基基底上的成核碳原子预处理Fe基基底的表面以生长的步骤 金刚石薄膜。 预处理包括使具有碳原子的Fe基衬底的表面过饱和并加热以形成扩散阻挡层。 在预处理期间，至少一部分碳原子扩散到Fe基底物中。 在沉积过程中，通过预先形成的扩散阻挡层来阻止碳原子扩散到Fe基衬底中，由此这些碳原子可用于金刚石薄膜的成核和生长。 在预处理期间扩散到Fe基底物中的一部分碳原子在沉积过程中成核，并且作为锚点，以在金刚石薄膜和Fe基底材的表面之间提供高粘合性。