- 专利标题： Semiconductor device equipped with semiconductor circuits composed of semiconductor elements and process for production thereof
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申请号： US10815701申请日： 2004-04-02
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公开(公告)号： US07078768B2公开(公告)日： 2006-07-18
- 发明人: Shunpei Yamazaki , Etsuko Fujimoto , Atsuo Isobe , Toru Takayama , Kunihiko Fukuchi
- 申请人： Shunpei Yamazaki , Etsuko Fujimoto , Atsuo Isobe , Toru Takayama , Kunihiko Fukuchi
- 申请人地址： JP Kanagawa-ken
- 专利权人： Semiconductor Energy Laboratory Co., Ltd.
- 当前专利权人： Semiconductor Energy Laboratory Co., Ltd.
- 当前专利权人地址： JP Kanagawa-ken
- 代理机构： Robinson Intellectual Property Law Office, P.C.
- 代理商 Eric J. Robinson
- 优先权： JP10-202377 19980716
- 主分类号： H01L27/12
- IPC分类号： H01L27/12
摘要：
A semiconductor device and a process for production thereof, said semiconductor device having a new electrode structure which has a low resistivity and withstands heat treatment at 400° C. and above. Heat treatment at a high temperature (400–700° C.) is possible because the wiring is made of Ta film or Ta-based film having high heat resistance. This heat treatment permits the gettering of metal element in crystalline silicon film. Since this heat treatment is lower than the temperature which the gate wiring (0.1–5 μm wide) withstands and the gate wiring is protected with a protective film, the gate wiring retains its low resistance.