- 专利标题: Apparatus and methods for minimizing arcing in a plasma processing chamber
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申请号: US10140618申请日: 2002-05-06
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公开(公告)号: US07086347B2公开(公告)日: 2006-08-08
- 发明人: Arthur M. Howald , Andras Kuthi , Andrew D. Bailey, III , Butch Berney
- 申请人: Arthur M. Howald , Andras Kuthi , Andrew D. Bailey, III , Butch Berney
- 申请人地址: US CA Fremont
- 专利权人: Lam Research Corporation
- 当前专利权人: Lam Research Corporation
- 当前专利权人地址: US CA Fremont
- 代理机构: IP Strategy Group, P.C.
- 主分类号: H01L21/00
- IPC分类号: H01L21/00 ; C23C16/00
摘要:
A plasma processing chamber for processing a substrate to form electronic components thereon is disclosed. The plasma processing chamber includes a plasma-facing component having a plasma-facing surface oriented toward a plasma in the plasma processing chamber during processing of the substrate, the plasma-facing component being electrically isolated from a ground terminal. The plasma processing chamber further includes a grounding arrangement coupled to the plasma-facing component, the grounding arrangement including a first resistance circuit disposed in a first current path between the plasma-facing component and the ground terminal. The grounding arrangement further includes a RF filter arrangement disposed in at least one other current path between the plasma-facing component and the ground terminal, wherein a resistance value of the first resistance circuit is selected to substantially eliminate arcing between the plasma and the plasma-facing component during the processing of the substrate.
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