发明授权
- 专利标题: Method of fabricating an oxide collar for a trench capacitor
- 专利标题(中): 制造用于沟槽电容器的氧化物环的方法
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申请号: US10765052申请日: 2004-01-28
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公开(公告)号: US07087485B2公开(公告)日: 2006-08-08
- 发明人: Harald Seidl , Martin Gutsche , Thomas Hecht
- 申请人: Harald Seidl , Martin Gutsche , Thomas Hecht
- 申请人地址: DE Munich
- 专利权人: Infineon Technologies AG
- 当前专利权人: Infineon Technologies AG
- 当前专利权人地址: DE Munich
- 代理机构: Slater & Matsil, L.L.P.
- 优先权: DE10303413 20030129
- 主分类号: H01L21/8242
- IPC分类号: H01L21/8242
摘要:
A method for fabricating patterned ceramic layers on areas of a relief structure, wherein the layers may be arranged essentially perpendicular to a top side of a substrate. In exemplary embodiments, a patterned ceramic layer forms an oxide collar for a trench capacitor. The oxide collar is produced by a trench firstly being filled with a resist in its lower section, and an oxide layer subsequently being produced on the uncovered areas of the substrate with the aid of a low temperature ALD method. By means of anisotropic etching, only those portions of the ceramic layer which are arranged at the perpendicular walls of the trench remain. The resist filling may subsequently be removed, for example, by means of an oxygen plasma.