- 专利标题： Method for fabricating connection regions of an integrated circuit, and integrated circuit having connection regions
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申请号： US10642092申请日： 2003-08-15
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公开(公告)号： US07087512B2公开(公告)日： 2006-08-08
- 发明人: Harry Hedler , Roland Irsigler , Thorsten Meyer , Barbara Vasquez
- 申请人： Harry Hedler , Roland Irsigler , Thorsten Meyer , Barbara Vasquez
- 申请人地址： DE Munich
- 专利权人： Infineon Technologies AG
- 当前专利权人： Infineon Technologies AG
- 当前专利权人地址： DE Munich
- 代理机构： Fish & Richardson P.C.
- 优先权： DE10238816 20020823
- 主分类号： H01L21/44
- IPC分类号： H01L21/44
摘要：
A method for fabricating an integrated circuit connection region includes application of a dielectric to an integrated circuit with a connection region, application of a corrodible metalization layer to the dielectric, application of a protection device to the metalization layer, and removal of the protection device in a region around the connection region.