发明授权
- 专利标题： Semiconductor device and method for manufacturing the same
- 专利标题（中）： 半导体装置及其制造方法
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申请号： US10954183申请日： 2004-10-01
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公开(公告)号： US07091538B2公开(公告)日： 2006-08-15
- 发明人: Katsuaki Natori , Koji Yamakawa , Hiroyuki Kanaya
- 申请人： Katsuaki Natori , Koji Yamakawa , Hiroyuki Kanaya
- 申请人地址： JP Tokyo
- 专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人地址： JP Tokyo
- 代理机构： Oblon, Spivak, McClelland, Maier & Neustadt, P.C.
- 优先权： JP2003-346926 20031006
- 主分类号： H01L29/76
- IPC分类号： H01L29/76
摘要：
A semiconductor device comprises a semiconductor substrate including a diffusion area, a capacitor provided above the semiconductor substrate and including a lower electrode, a dielectric film, and an upper electrode, a plug provided between the semiconductor substrate and the capacitor and having a lower end connected to the diffusion area and an upper end connected to the lower electrode, and a dummy plug provided between the semiconductor substrate and the capacitor and having a lower end not connected to the diffusion area and an upper end connected to the lower electrode.
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