发明授权
- 专利标题： Method for adjusting capacitance of an on-chip capacitor
- 专利标题（中）： 调整片上电容器电容的方法
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申请号： US11043760申请日： 2005-01-26
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公开(公告)号： US07092235B2公开(公告)日： 2006-08-15
- 发明人: Lawrence A. Clevenger , Timothy J. Dalton , Louis L. Hsu , Carl Radens , Keith Kwong Hon Wong , Chih-Chao Yang
- 申请人： Lawrence A. Clevenger , Timothy J. Dalton , Louis L. Hsu , Carl Radens , Keith Kwong Hon Wong , Chih-Chao Yang
- 申请人地址： US NY Armonk
- 专利权人： International Business Machines Corporation
- 当前专利权人： International Business Machines Corporation
- 当前专利权人地址： US NY Armonk
- 代理机构： Patterson & Sheridan, L.L.P.
- 代理商 Wan Yee Cheung, Esq.; Kin-Wah Tong, Esq.
- 主分类号： H01G4/06
- IPC分类号： H01G4/06
摘要：
A method and apparatus, is herein disclosed, for adjusting capacitance of an on-chip capacitor formed on a substrate. A plurality of conductive layers is separated by a layer ofdielectric material. The dielectric material of the capacitor is exposed to an ion beam. The ion beam includes ions of at least one material to modify a dielectric constant of the dielectric material.
公开/授权文献
- US20050128682A1 Method for adjusting capacitance of an on-chip capacitor 公开/授权日：2005-06-16
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