发明授权
- 专利标题： Method for fabricating Bi thin film and device using the same
- 专利标题（中）： 制造Bi薄膜的方法及使用其的装置
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申请号： US10798447申请日： 2004-03-12
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公开(公告)号： US07095070B2公开(公告)日： 2006-08-22
- 发明人: Woo Young Lee , Kyung Ho Shin , Suk Hee Han , Joon Yeon Chang , Hi Jung Kim , Dal Young Kim , Kwan Hyi Lee , Kyoung Il Lee , Min Hong Jeun
- 申请人： Woo Young Lee , Kyung Ho Shin , Suk Hee Han , Joon Yeon Chang , Hi Jung Kim , Dal Young Kim , Kwan Hyi Lee , Kyoung Il Lee , Min Hong Jeun
- 申请人地址： KR Seoul
- 专利权人： Korea Institute of Science and Technology
- 当前专利权人： Korea Institute of Science and Technology
- 当前专利权人地址： KR Seoul
- 代理机构： Morrison & Foerster LLP
- 优先权： KR10-2003-0016173 20030314
- 主分类号： H01L31/062
- IPC分类号： H01L31/062 ; H01L21/00
摘要：
In a method for fabricating a Bi thin film having a great MR (magnetoresistance) at room temperature and a method for fabricating a spintronics device using the same, the Bi thin film is fabricated by an electrodepostiting method and a sputtering method and has very great MR characteristics at room temperature, and it can be applied to various spintronics devices.
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