Invention Grant
- Patent Title: Deposition process for high aspect ratio trenches
- Patent Title (中): 高宽比沟槽沉积工艺
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Application No.: US10319827Application Date: 2002-12-13
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Publication No.: US07097886B2Publication Date: 2006-08-29
- Inventor: Farhad K. Moghadam , Michael S. Cox , Padmanabhan Krishnaraj , Thanh N. Pham , Zhenjiang Cui
- Applicant: Farhad K. Moghadam , Michael S. Cox , Padmanabhan Krishnaraj , Thanh N. Pham , Zhenjiang Cui
- Applicant Address: US CA Santa Clara
- Assignee: Applied Materials, Inc.
- Current Assignee: Applied Materials, Inc.
- Current Assignee Address: US CA Santa Clara
- Agency: Townsend and Townsend and Crew LLP
- Main IPC: H05H1/24
- IPC: H05H1/24

Abstract:
A method of depositing an insulating film over a substrate having a gap formed between two adjacent raised features. The method includes depositing one portion of the insulating film over the substrate and in the gap using a high density plasma process that has simultaneous deposition and sputtering components and depositing another portion of the insulating film over the substrate and in the gap using an atomic layer deposition process. In some embodiments the portion of the film deposited by an atomic layer deposition process is deposited over the portion of the film deposited using a high density plasma CVD technique. In other embodiments, the portion of the film deposited by a high density plasma CVD process is deposited over the portion of the film deposited using an atomic layer deposition process.
Public/Granted literature
- US20040115898A1 Deposition process for high aspect ratio trenches Public/Granted day:2004-06-17
Information query
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