发明授权
- 专利标题: Deep trench formation in semiconductor device fabrication
- 专利标题(中): 半导体器件制造中的深沟槽形成
-
申请号: US10711953申请日: 2004-10-15
-
公开(公告)号: US07101806B2公开(公告)日: 2006-09-05
- 发明人: June Cline , Dinh Dang , Mark Lagerquist , Jeffrey C. Maling , Lisa Y. Ninomiya , Bruce W. Porth , Steven M. Shank , Jessica A. Trapasso
- 申请人: June Cline , Dinh Dang , Mark Lagerquist , Jeffrey C. Maling , Lisa Y. Ninomiya , Bruce W. Porth , Steven M. Shank , Jessica A. Trapasso
- 申请人地址: US NY Armonk
- 专利权人: International Business Machines Corporation
- 当前专利权人: International Business Machines Corporation
- 当前专利权人地址: US NY Armonk
- 代理机构: Schmeiser, Olsen & Watts
- 代理商 William D. Sabo
- 主分类号: H01L21/302
- IPC分类号: H01L21/302
摘要:
A method for etching a deep trench in a semiconductor substrate. The method comprises the steps of (a) forming a hard mask layer on top of the semiconductor substrate, (b) etching a hard mask opening in the hard mask layer so as to expose the semiconductor substrate to the atmosphere through the hard mask layer opening, wherein the step of etching the hard mask opening includes the step of etching a bottom portion of the hard mask opening such that a side wall of the bottom portion of the hard mask opening is substantially vertical, and (c) etching a deep trench in the substrate via the hard mask opening.