- 专利标题: Techniques of recovering data from memory cells affected by field coupling with adjacent memory cells
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申请号: US11028906申请日: 2005-01-03
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公开(公告)号: US07102924B2公开(公告)日: 2006-09-05
- 发明人: Jian Chen , Long C. Pham , Alexander K. Mak
- 申请人: Jian Chen , Long C. Pham , Alexander K. Mak
- 申请人地址: US CA Milpitas
- 专利权人: SanDisk Corporation
- 当前专利权人: SanDisk Corporation
- 当前专利权人地址: US CA Milpitas
- 代理机构: Parsons Hsue & de Runtz LLP
- 主分类号: G11C16/34
- IPC分类号: G11C16/34
摘要:
Techniques of overcoming a degradation of the apparent charge levels stored in one row of memory cells as a result of subsequently programming an adjacent row of memory cells. After storing the data of the subsequently programmed row elsewhere, the charge levels of its cells are driven to common level. The charge levels of the first row of cells then have a uniform influence from the charge levels of the second row, and, as a result, the chance of successfully reading the data stored in the first row is significantly increased.