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    Techniques of recovering data from memory cells affected by field coupling with adjacent memory cells
    1.
    发明授权
    Techniques of recovering data from memory cells affected by field coupling with adjacent memory cells 有权
    从与相邻存储器单元的场耦合影响的存储器单元中恢复数据的技术

    公开(公告)号：US06542407B1

    公开(公告)日：2003-04-01

    申请号：US10052759

    申请日：2002-01-18

    申请人： Jian Chen ,  Long C. Pham ,  Alexander K. Mak

    发明人： Jian Chen ,  Long C. Pham ,  Alexander K. Mak

    IPC分类号： G11C1600

    CPC分类号： G11C16/3431 ,  G11C11/5621 ,  G11C11/5642 ,  G11C16/3418

    摘要： Techniques of overcoming a degradation of the apparent charge levels stored in one row of memory cells as a result of subsequently programming an adjacent row of memory cells. After storing the data of the subsequently programmed row elsewhere, the charge levels of its cells are driven to common level. The charge levels of the first row of cells then have a uniform influence from the charge levels of the second row, and, as a result, the chance of successfully reading the data stored in the first row is significantly increased.

    摘要翻译： 作为随后对相邻行的存储器单元进行编程的结果克服存储在一行存储器单元中的表观电荷水平的劣化的技术。 在随后编程的行的数据存储在其他地方之后，其单元的电荷电平被驱动到公共电平。 然后，第一行单元的电荷电平具有来自第二行的电荷水平的均匀影响，结果，成功读取存储在第一行中的数据的机会显着增加。

    Techniques of recovering data from memory cells affected by field coupling with adjacent memory cells
    3.
    发明授权
    Techniques of recovering data from memory cells affected by field coupling with adjacent memory cells 有权
    从与相邻存储器单元的场耦合影响的存储器单元中恢复数据的技术

    公开(公告)号：US06847553B2

    公开(公告)日：2005-01-25

    申请号：US10357840

    申请日：2003-02-03

    申请人： Jian Chen ,  Long C. Pham ,  Alexander K. Mak

    发明人： Jian Chen ,  Long C. Pham ,  Alexander K. Mak

    IPC分类号： G11C16/02 ,  G11C11/56 ,  G11C16/04 ,  G11C16/06 ,  G11C16/34 ,  G11C29/42 ,  G11C16/00

    CPC分类号： G11C16/3431 ,  G11C11/5621 ,  G11C11/5642 ,  G11C16/3418

    摘要： Techniques of overcoming a degradation of the apparent charge levels stored in one row of memory cells as a result of subsequently programming an adjacent row of memory cells. After storing the data of the subsequently programmed row elsewhere, the charge levels of its cells are driven to common level. The charge levels of the first row of cells then have a uniform influence from the charge levels of the second row, and, as a result, the chance of successfully reading the data stored in the first row is significantly increased.

    摘要翻译： 作为随后对相邻行的存储器单元进行编程的结果克服存储在一行存储器单元中的表观电荷水平的劣化的技术。 在随后编程的行的数据存储在其他地方之后，其单元的电荷电平被驱动到公共电平。 然后，第一行单元的电荷电平具有来自第二行的电荷水平的均匀影响，结果，成功读取存储在第一行中的数据的机会显着增加。