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    Techniques of recovering data from memory cells affected by field coupling with adjacent memory cells
    1.
    发明授权
    Techniques of recovering data from memory cells affected by field coupling with adjacent memory cells 有权
    从与相邻存储器单元的场耦合影响的存储器单元中恢复数据的技术

    公开(公告)号：US06542407B1

    公开(公告)日：2003-04-01

    申请号：US10052759

    申请日：2002-01-18

    申请人： Jian Chen ,  Long C. Pham ,  Alexander K. Mak

    发明人： Jian Chen ,  Long C. Pham ,  Alexander K. Mak

    IPC分类号： G11C1600

    CPC分类号： G11C16/3431 ,  G11C11/5621 ,  G11C11/5642 ,  G11C16/3418

    摘要： Techniques of overcoming a degradation of the apparent charge levels stored in one row of memory cells as a result of subsequently programming an adjacent row of memory cells. After storing the data of the subsequently programmed row elsewhere, the charge levels of its cells are driven to common level. The charge levels of the first row of cells then have a uniform influence from the charge levels of the second row, and, as a result, the chance of successfully reading the data stored in the first row is significantly increased.

    摘要翻译： 作为随后对相邻行的存储器单元进行编程的结果克服存储在一行存储器单元中的表观电荷水平的劣化的技术。 在随后编程的行的数据存储在其他地方之后，其单元的电荷电平被驱动到公共电平。 然后，第一行单元的电荷电平具有来自第二行的电荷水平的均匀影响，结果，成功读取存储在第一行中的数据的机会显着增加。

    Techniques of recovering data from memory cells affected by field coupling with adjacent memory cells
    3.
    发明授权
    Techniques of recovering data from memory cells affected by field coupling with adjacent memory cells 有权
    从与相邻存储器单元的场耦合影响的存储器单元中恢复数据的技术

    公开(公告)号：US06847553B2

    公开(公告)日：2005-01-25

    申请号：US10357840

    申请日：2003-02-03

    申请人： Jian Chen ,  Long C. Pham ,  Alexander K. Mak

    发明人： Jian Chen ,  Long C. Pham ,  Alexander K. Mak

    IPC分类号： G11C16/02 ,  G11C11/56 ,  G11C16/04 ,  G11C16/06 ,  G11C16/34 ,  G11C29/42 ,  G11C16/00

    CPC分类号： G11C16/3431 ,  G11C11/5621 ,  G11C11/5642 ,  G11C16/3418

    摘要： Techniques of overcoming a degradation of the apparent charge levels stored in one row of memory cells as a result of subsequently programming an adjacent row of memory cells. After storing the data of the subsequently programmed row elsewhere, the charge levels of its cells are driven to common level. The charge levels of the first row of cells then have a uniform influence from the charge levels of the second row, and, as a result, the chance of successfully reading the data stored in the first row is significantly increased.

    摘要翻译： 作为随后对相邻行的存储器单元进行编程的结果克服存储在一行存储器单元中的表观电荷水平的劣化的技术。 在随后编程的行的数据存储在其他地方之后，其单元的电荷电平被驱动到公共电平。 然后，第一行单元的电荷电平具有来自第二行的电荷水平的均匀影响，结果，成功读取存储在第一行中的数据的机会显着增加。

    Non-volatile system with program time control
    7.
    发明授权
    Non-volatile system with program time control 有权
    具有程序时间控制的非易失性系统

    公开(公告)号：US07110298B2

    公开(公告)日：2006-09-19

    申请号：US10896096

    申请日：2004-07-20

    申请人： Farookh Moogat ,  Yan Li ,  Alexander K. Mak

    发明人： Farookh Moogat ,  Yan Li ,  Alexander K. Mak

    IPC分类号： G11C16/04

    CPC分类号： G11C16/10 ,  G11C16/30

    摘要： In a non-volatile memory system, when it is discovered that the voltage pump pulse provided by a charge pump for programming the memory cells does not match a reference voltage, the programming time period of the voltage pump pulse is adjusted to a value that remains substantially unchanged until the end of the programming cycle. In this manner, the fluctuation in the effective programming time period of the programming pulses is prevented for the remainder of the programming cycle so that a broadening of the threshold voltage distribution will not occur or will be reduced. This feature allows a short programming time period to be designated for the programming pulses for enhanced performance, while allowing the flexibility of increased program time period when the charge pump is operating under conditions that causes it to be slow and/or weak.

    摘要翻译： 在非易失性存储器系统中，当发现由用于编程存储器单元的电荷泵提供的电压泵浦脉冲与参考电压不匹配时，电压泵浦脉冲的编程时间周期被调整为保持的值 基本上没有变化，直到编程周期结束。 以这种方式，编程脉冲的有效编程时间段的波动在编程周期的其余部分被阻止，使得阈值电压分布的加宽不会发生或将被减少。 该特征允许为编程脉冲指定短的编程时间段以提高性能，同时允许当电荷泵在导致其缓慢和/或弱的条件下运行时增加编程时间段的灵活性。

    Non-volatile system with program time control
    8.
    发明授权
    Non-volatile system with program time control 有权
    具有程序时间控制的非易失性系统

    公开(公告)号：US07262998B2

    公开(公告)日：2007-08-28

    申请号：US11462920

    申请日：2006-08-07

    申请人： Farookh Moogat ,  Yan Li ,  Alexander K. Mak

    发明人： Farookh Moogat ,  Yan Li ,  Alexander K. Mak

    IPC分类号： G11C16/04

    CPC分类号： G11C16/10 ,  G11C16/30

    摘要： In a non-volatile memory system, when it is discovered that the voltage pump pulse provided by a charge pump for programming the memory cells does not match a reference voltage, the programming time period of the voltage pump pulse is adjusted to a value that remains substantially unchanged until the end of the programming cycle. In this manner, the fluctuation in the effective programming time period of the programming pulses is prevented for the remainder of the programming cycle so that a broadening of the threshold voltage distribution will not occur or will be reduced. This feature allows a short programming time period to be designated for the programming pulses for enhanced performance, while allowing the flexibility of increased program time period when the charge pump is operating under conditions that causes it to be slow and/or weak.

    摘要翻译： 在非易失性存储器系统中，当发现由用于编程存储器单元的电荷泵提供的电压泵浦脉冲与参考电压不匹配时，电压泵浦脉冲的编程时间周期被调整为保持的值 基本上没有变化，直到编程周期结束。 以这种方式，编程脉冲的有效编程时间段的波动在编程周期的其余部分被阻止，使得阈值电压分布的加宽不会发生或将被减少。 该特征允许为编程脉冲指定短的编程时间段以提高性能，同时允许当电荷泵在导致其缓慢和/或弱的条件下运行时增加编程时间段的灵活性。