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US07102953B2 Semiconductor memory device capable of operating at high speed and with low power consumption while ensuring reliability of memory cell 失效
半导体存储器件能够在确保存储单元的可靠性的同时以高速和低功耗运行

  • 专利标题： Semiconductor memory device capable of operating at high speed and with low power consumption while ensuring reliability of memory cell
  • 专利标题（中）： 半导体存储器件能够在确保存储单元的可靠性的同时以高速和低功耗运行
  • 申请号： US11030185
    申请日： 2005-01-07
  • 公开(公告)号： US07102953B2
    公开(公告)日： 2006-09-05
  • 发明人: Takashi Kono , Hironori Iga
  • 申请人： Takashi Kono , Hironori Iga
  • 申请人地址： JP Tokyo
  • 专利权人： Renesas Technology Corp.
  • 当前专利权人： Renesas Technology Corp.
  • 当前专利权人地址： JP Tokyo
  • 代理机构： Buchanan Ingersoll & Rooney, PC
  • 优先权： JP2004-026998 20040203
  • 主分类号： G11C5/14
  • IPC分类号： G11C5/14
Semiconductor memory device capable of operating at high speed and with low power consumption while ensuring reliability of memory cell
摘要：
A monitor circuit for monitoring external potential EXTVDD and variable delay circuit determine the time interval in which signal ZODACT is being at the L level according to the potential level of external potential EXTVDD, and thus the supplying time of external potential EXTVDD can be dynamically changed. When external potential EXTVDD is at the upper limit of specification of product, the supplying time is short, thereby preventing overcharge of memory cells or bit lines. When external potential EXTVDD is at the lower limit of specification of product, the supplying time becomes longer, thereby ensuring a sufficient over-driving time interval. It is possible to ensure the reliability of the memory cells and perform the reading operation throughout the entire range of the specification of product of external potential EXTVDD. Therefore, it is possible to provide a semiconductor memory device capable of performing a reading operation at high speeds while ensuring the reliability.
摘要（中）：

用于监视外部电位EXTVDD和可变延迟电路的监视电路根据外部电位EXTVDD的电位电平确定信号ZODACT处于L电平的时间间隔，从而可以动态地改变外部电位EXTVDD的供电时间。 当外部电位EXTVDD处于产品规格的上限时，供电时间短，从而防止存储单元或位线的过充电。 当外部电位EXTVDD处于产品规格的下限时，供电时间变长，从而确保足够的过驱动时间间隔。 可以确保存储单元的可靠性，并在外部电位EXTVDD的产品规格的整个范围内执行读取操作。 因此，可以提供能够在确保可靠性的同时高速执行读取操作的半导体存储器件。

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