发明授权
US07102954B2 Semiconductor integrated circuit device having logic circuit and dynamic random access memory on the same chip
有权
具有在同一芯片上的逻辑电路和动态随机存取存储器的半导体集成电路器件
- 专利标题： Semiconductor integrated circuit device having logic circuit and dynamic random access memory on the same chip
- 专利标题（中）： 具有在同一芯片上的逻辑电路和动态随机存取存储器的半导体集成电路器件
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申请号： US10714393申请日： 2003-11-17
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公开(公告)号： US07102954B2公开(公告)日： 2006-09-05
- 发明人: Hideyuki Noda , Kazutami Arimoto , Katsumi Dosaka , Takeshi Fujino
- 申请人： Hideyuki Noda , Kazutami Arimoto , Katsumi Dosaka , Takeshi Fujino
- 申请人地址： JP Tokyo
- 专利权人： Renesas Technology Corp.
- 当前专利权人： Renesas Technology Corp.
- 当前专利权人地址： JP Tokyo
- 代理机构： McDermott Will & Emery LLP
- 优先权： JP11-243189 19990830
- 主分类号： G11C5/14
- IPC分类号： G11C5/14 ; G11C29/06
摘要：
In a memory circuit, a transistor formed in the same process as that of a logic transistor is used for peripheral circuitry except for a region to be supplied with high voltage. Thus, the manufacturing process can be simplified and a logic-merged memory operating at a high speed is provided.
公开/授权文献
- US20040136230A1 Logic-merged memory 公开/授权日：2004-07-15