发明授权
US07105897B2 Semiconductor structure and method for integrating SOI devices and bulk devices
有权
用于集成SOI器件和散装器件的半导体结构和方法
- 专利标题： Semiconductor structure and method for integrating SOI devices and bulk devices
- 专利标题（中）： 用于集成SOI器件和散装器件的半导体结构和方法
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申请号： US10977236申请日： 2004-10-28
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公开(公告)号： US07105897B2公开(公告)日： 2006-09-12
- 发明人: Hao-Yu Chen , Fu-Liang Yang , Hung-Wei Chen , Ping-Kun Wu , Chao-Hsiung Wang
- 申请人： Hao-Yu Chen , Fu-Liang Yang , Hung-Wei Chen , Ping-Kun Wu , Chao-Hsiung Wang
- 申请人地址： TW Hsin-Chu
- 专利权人： Taiwan Semiconductor Manufacturing Company
- 当前专利权人： Taiwan Semiconductor Manufacturing Company
- 当前专利权人地址： TW Hsin-Chu
- 代理机构： Duane Morris LLP
- 主分类号： H01L27/01
- IPC分类号： H01L27/01 ; H01L27/12 ; H01L31/0392
摘要：
This invention discloses a method and a semiconductor structure for integrating at least one bulk device and at least one silicon-on-insulator (SOI) device. The semiconductor structure includes a first substrate having an SOI area and a bulk area, on which the bulk device is formed; an insulation layer formed on the first substrate in the SOI area; and a second substrate, on which the SOI device is formed, stacked on the insulation layer. The surface of the first substrate is not on the substantially same plane as the surface of the second substrate.
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