Invention Grant
- Patent Title: Plasma processing device and baffle plate thereof
- Patent Title (中): 等离子体处理装置及挡板
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Application No.: US10508700Application Date: 2003-03-28
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Publication No.: US07109660B2Publication Date: 2006-09-19
- Inventor: Hiroyuki Ishihara , Youichi Araki , Toshiki Takahashi , Takuya Kubo , Atsushi Ito , Yoko Ono
- Applicant: Hiroyuki Ishihara , Youichi Araki , Toshiki Takahashi , Takuya Kubo , Atsushi Ito , Yoko Ono
- Applicant Address: JP Tokyo
- Assignee: Tokyo Electron Limited
- Current Assignee: Tokyo Electron Limited
- Current Assignee Address: JP Tokyo
- Agency: Oblon, Spivak, McClelland, Maier & Neustadt, P.C.
- Priority: JP2002-096236 20020329; JP2002-227259 20020805
- International Application: PCT/JP03/03954 WO 20030328
- International Announcement: WO03/083923 WO 20031009
- Main IPC: H01J7/24
- IPC: H01J7/24

Abstract:
A plasma processing device is able to positively enhance a process-gas exhaust efficiency in a processing region and restrict plasma leaking. A processing container of a magnetron type parallel plate plasma processing device has a separator for separating the inside of the processing container into a processing region and an exhaust region. The separator has a plurality of gas passage holes to establish communication between the processing region and the exhaust region, and consists of a non-conductive member. A conductive member is disposed on a gas passage-side surface facing the gas passage holes. A voltage V is applied by a power supply to the conductive member so that the gas passage-side surface is at a potential higher than that of a processing-region surface.
Public/Granted literature
- US20050167052A1 Plasma processing device and baffle plate thereof Public/Granted day:2005-08-04
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