发明授权
US07110289B1 Method and system for controlling MRAM write current to reduce power consumption
有权
用于控制MRAM写入电流以减少功耗的方法和系统
- 专利标题： Method and system for controlling MRAM write current to reduce power consumption
- 专利标题（中）： 用于控制MRAM写入电流以减少功耗的方法和系统
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申请号： US10816271申请日： 2004-03-31
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公开(公告)号： US07110289B1公开(公告)日： 2006-09-19
- 发明人: Kyusik Sin , Hugh Craig Hiner , Xizeng (Stone) Shi , William D. Jensen , Hua-Ching Tong , Matthew R Gibbons , Roberto Bez , Giulio Casagrande , Paolo Cappeletti , Marco Pasotti
- 申请人： Kyusik Sin , Hugh Craig Hiner , Xizeng (Stone) Shi , William D. Jensen , Hua-Ching Tong , Matthew R Gibbons , Roberto Bez , Giulio Casagrande , Paolo Cappeletti , Marco Pasotti
- 申请人地址： US CA Fremont IT Milan
- 专利权人： Western Digital (Fremont), Inc.,STMicroelectronics S.R.L.
- 当前专利权人： Western Digital (Fremont), Inc.,STMicroelectronics S.R.L.
- 当前专利权人地址： US CA Fremont IT Milan
- 代理商 Jonathan E. Prejean, Esq.
- 主分类号： G11C11/15
- IPC分类号： G11C11/15
摘要：
In a method and system for reducing power consumed by a magnetic memory, magnetic memory cells are coupled to a bit line and are associated with a plurality of digit lines. A bit line current is provided in the bit line. Digit currents are provided in parallel in the digit lines at substantially the same time as the bit line current. The digit and bit line currents allow the magnetic memory cells to be written to a plurality of states in parallel.
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