Invention Grant
- Patent Title: Semiconductor device having different metal-semiconductor portions formed in a semiconductor region and a method for fabricating the semiconductor device
-
Application No.: US10259016Application Date: 2002-09-27
-
Publication No.: US07115464B2Publication Date: 2006-10-03
- Inventor: Rolf Stephan , Manfred Horstmann , Karsten Wieczorek
- Applicant: Rolf Stephan , Manfred Horstmann , Karsten Wieczorek
- Applicant Address: US TX Austin
- Assignee: Advanced Micro Devices, Inc.
- Current Assignee: Advanced Micro Devices, Inc.
- Current Assignee Address: US TX Austin
- Agency: Williams, Morgan & Amerson
- Priority: DE10209059 20020301
- Main IPC: H01L21/8238
- IPC: H01L21/8238 ; H01L21/336 ; H01L21/76 ; H01L21/3205
Abstract:
In a method for fabricating a semiconductor device different types of a metal-semiconductor compound are formed on or in at least two different conductive semiconductor regions so that for each semiconductor region the metal-semiconductor compound region may be formed to obtain an optimum overall performance of the semiconductor device. On one of the two semiconductor regions, the metal-semiconductor compound is formed of at least two different metal layers, whereas the metal-semiconductor compound in or on the other semiconductor region is formed from a single metal layer.
Public/Granted literature
Information query
IPC分类:
