发明授权
- 专利标题: Method and structure for enhancing trench capacitance
- 专利标题(中): 增加沟槽电容的方法和结构
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申请号: US10708814申请日: 2004-03-26
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公开(公告)号: US07115934B2公开(公告)日: 2006-10-03
- 发明人: Kangguo Cheng , Ramachandra Divakaruni
- 申请人: Kangguo Cheng , Ramachandra Divakaruni
- 申请人地址: US NY Armonk
- 专利权人: International Business Machines Corporation
- 当前专利权人: International Business Machines Corporation
- 当前专利权人地址: US NY Armonk
- 代理商 Eric Petraske; Rosa Suazo
- 主分类号: H01L27/108
- IPC分类号: H01L27/108 ; H01L29/76 ; H01L29/94 ; H01L31/119
摘要:
A trench capacitor formed with a bottle etch step has a polygonal cross section produced by forming thermally oxidizing the trench walls with thinner oxide at the corners of the trench, then performing the bottle etch step with the nitride in place, thereby extending the trench walls laterally only outside the corners, so that the distance of closest approach between adjacent trenches is reduced while the length of the perimeter is maintained.
公开/授权文献
- US20050215007A1 METHOD AND STRUCTURE FOR ENHANCING TRENCH CAPACITANCE 公开/授权日:2005-09-29
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