Method and apparatus on charges injection using piezo-ballistic-charges injection mechanism are provided for nonvolatile memory device. The device has a strain source, an injection filter, a tunneling gate, a ballistic gate, a charge storage region, a source, and a drain with a channel defined between the source and drain. The strain source permits piezo-effect in ballistic charges transport to enable the piezo-ballistic-charges injection mechanism. The injection filter permits transporting of charge carriers of one polarity type from the tunneling gate through the blocking material and the ballistic gate to the charge storage region while blocking the transport of charge carriers of an opposite polarity from the ballistic gate to the tunneling gate. The present invention further provides an energy band engineering method permitting the memory device be operated without suffering from disturbs, from dielectric breakdown, from impact ionization, and from undesirable RC effects.