发明授权
- 专利标题： Nonvolatile semiconductor memory device and manufacturing method thereof
- 专利标题（中）： 非易失性半导体存储器件及其制造方法
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申请号： US11013406申请日： 2004-12-17
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公开(公告)号： US07115943B2公开(公告)日： 2006-10-03
- 发明人: Toshiyuki Mine , Natsuki Yokoyama , Kan Yasui
- 申请人： Toshiyuki Mine , Natsuki Yokoyama , Kan Yasui
- 申请人地址： JP Tokyo
- 专利权人： Renesas Technology Corp.
- 当前专利权人： Renesas Technology Corp.
- 当前专利权人地址： JP Tokyo
- 代理机构： Reed Smith LLP
- 代理商 Stanley P. Fisher, Esq.; Juan Carlos A. Marquez, Esq.
- 优先权： JP2004-066767 20040310
- 主分类号： H01L29/792
- IPC分类号： H01L29/792
摘要：
A MONOS nonvolatile memory of a split gate structure, wherein writing and erasing are performed by hot electrons and hot holes respectively, is prone to cause electrons not to be erased and to remain in an Si nitride film on a select gate electrode sidewall and that results in the deterioration of rewriting durability. When long time erasing is applied as a measure to solve the problem, drawbacks appear, such as the increase of a circuit area caused by the increase of the erasing current and the deterioration of retention characteristics. In the present invention, an Si nitride film is formed by the reactive plasma sputter deposition method that enables oriented deposition and the Si nitride film on a select gate electrode sidewall is removed at the time when a top Si oxide film is formed.
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