发明授权
- 专利标题: Nanowire varactor diode and methods of making same
- 专利标题(中): 纳米线变容二极管及其制作方法
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申请号: US10806361申请日: 2004-03-23
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公开(公告)号: US07115971B2公开(公告)日: 2006-10-03
- 发明人: David Stumbo , Jian Chen , David Heald , Yaoling Pan
- 申请人: David Stumbo , Jian Chen , David Heald , Yaoling Pan
- 申请人地址: US CA Palo Alto
- 专利权人: Nanosys, Inc.
- 当前专利权人: Nanosys, Inc.
- 当前专利权人地址: US CA Palo Alto
- 代理机构: Sterne, Kessler, Goldstein & Fox PLLC
- 主分类号: H01L29/93
- IPC分类号: H01L29/93
摘要:
A nanowire varactor diode and methods of making the same are disclosed. The structure comprises a coaxial capacitor running the length of the semiconductor nanowire. In one embodiment, a semiconductor nanowire of a first conductivity type is deposited on a substrate. An insulator is formed on at least a portion of the nanowire's surface. A region of the nanowire is doped with a second conductivity type material. A first electrical contact is formed on at least part of the insulator and the doped region. A second electrical contact is formed on a non-doped potion of the nanowire. During operation, the conductivity type at the surface of the nanowire inverts and a depletion region is formed upon application of a voltage to the first and second electrical contacts. The varactor diode thereby exhibits variable capacitance as a function of the applied voltage.
公开/授权文献
- US20050212079A1 Nanowire varactor diode and methods of making same 公开/授权日:2005-09-29