发明授权
- 专利标题: Method of achieving improved STI gap fill with reduced stress
- 专利标题(中): 实现改善STI间隙填充减少应力的方法
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申请号: US10767657申请日: 2004-01-29
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公开(公告)号: US07118987B2公开(公告)日: 2006-10-10
- 发明人: Chu-Yun Fu , Chih-Cheng Lu , Syun-Ming Jang
- 申请人: Chu-Yun Fu , Chih-Cheng Lu , Syun-Ming Jang
- 申请人地址: TW Hsin Chu
- 专利权人: Taiwan Semiconductor Manufacturing Co., Ltd.
- 当前专利权人: Taiwan Semiconductor Manufacturing Co., Ltd.
- 当前专利权人地址: TW Hsin Chu
- 代理机构: Tung & Associates
- 主分类号: H01L21/76
- IPC分类号: H01L21/76
摘要:
A shallow trench isolation (STI) structure and method of forming the same with reduced stress to improve charge mobility the method including providing a semiconductor substrate comprising at least one patterned hardmask layer overlying the semiconductor substrate; dry etching a trench in the semiconductor substrate according to the at least one patterned hardmask layer; forming one or more liner layers to line the trench selected from the group consisting of silicon dioxide, silicon nitride, and silicon oxynitride; forming one or more layers of trench filling material comprising silicon dioxide to backfill the trench; carrying out at least one thermal annealing step to relax accumulated stress in the trench filling material; carrying out at least one of a CMP and dry etch process to remove excess trench filling material above the trench level; and, removing the at least one patterned hardmask layer.