发明授权
- 专利标题: Semiconductor device
- 专利标题(中): 半导体器件
-
申请号: US11025634申请日: 2004-12-28
-
公开(公告)号: US07119428B2公开(公告)日: 2006-10-10
- 发明人: Hisashi Tanie , Nae Hisano , Hiroyuki Ohta , Hiroaki Ikeda , Ichiro Anjo , Mitsuaki Katagiri , Yuji Watanabe
- 申请人: Hisashi Tanie , Nae Hisano , Hiroyuki Ohta , Hiroaki Ikeda , Ichiro Anjo , Mitsuaki Katagiri , Yuji Watanabe
- 申请人地址: JP Tokyo JP Tokyo
- 专利权人: Hitachi, Ltd.,Elpida Memory, Inc.
- 当前专利权人: Hitachi, Ltd.,Elpida Memory, Inc.
- 当前专利权人地址: JP Tokyo JP Tokyo
- 代理机构: Townsend and Townsend and Crew LLP
- 优先权: JP2004-055630 20040301
- 主分类号: H01L23/22
- IPC分类号: H01L23/22 ; H01L23/053 ; H01L21/44
摘要:
A semiconductor device capable of reducing a temperature increase during operation thereof is provided. In the semiconductor device, an interface chip is stacked on a plurality of stacked semiconductor elements. Both an “Si” interposer and a resin interposer are arranged under the plural semiconductor elements. The Si interposer is arranged between the resin interposer and the plural semiconductor elements. The Si interposer owns a thickness which is thicker than a thickness of a semiconductor element, and also has a linear expansion coefficient which is smaller than a linear expansion coefficient of the resin interposer, and further, is larger than, or equal to linear expansion coefficients of the plural semiconductor elements.
公开/授权文献
- US20050189639A1 Semiconductor device 公开/授权日:2005-09-01
信息查询
IPC分类: