利索-全球专利检索

  1. 登录
  2. 注册
发明授权
US07122431B2 Methods of fabrication metal oxide semiconductor (MOS) transistors having buffer regions below source and drain regions 有权
制造具有低于源极和漏极区域的缓冲区的金属氧化物半导体（MOS）晶体管的方法

Methods of fabrication metal oxide semiconductor (MOS) transistors having buffer regions below source and drain regions
摘要：
Methods of forming a unit cell of a metal oxide semiconductor (MOS) transistor are provided. An integrated circuit substrate is formed. A MOS transistor is formed on the integrated circuit substrate. The MOS transistor has a source region, a drain region and a gate. The gate is between the source region and the drain region. The first and second spaced apart buffer regions are formed beneath the source region and the drain region and between respective ones of the source region and integrated circuit substrate and the drain region and the integrated circuit substrate.
摘要（中）：

提供了形成金属氧化物半导体（MOS）晶体管的晶胞的方法。 形成集成电路基板。 在集成电路基板上形成MOS晶体管。 MOS晶体管具有源极区，漏极区和栅极。 栅极在源极区域和漏极区域之间。 第一和第二间隔开的缓冲区形成在源极区域和漏极区域之间以及源极区域和集成电路衬底以及漏极区域和集成电路衬底中的相应区域之间。

公开/授权文献
信息查询
Espacenet
0/0