发明授权
- 专利标题: Method for fabricating pad redistribution layer
- 专利标题(中): 制造衬垫再分布层的方法
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申请号: US10896831申请日: 2004-07-22
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公开(公告)号: US07122458B2公开(公告)日: 2006-10-17
- 发明人: Chia-Jen Cheng , Hui-Mei Yu , Li-Hsin Tseng , Tzu-Han Lin , Ching-Chiang Wu , Chun-Yen Lo , Li-Chuan Huang , Boe Su
- 申请人: Chia-Jen Cheng , Hui-Mei Yu , Li-Hsin Tseng , Tzu-Han Lin , Ching-Chiang Wu , Chun-Yen Lo , Li-Chuan Huang , Boe Su
- 申请人地址: TW Hsinchu
- 专利权人: Taiwan Semiconductor Manufacturing Co., Ltd.
- 当前专利权人: Taiwan Semiconductor Manufacturing Co., Ltd.
- 当前专利权人地址: TW Hsinchu
- 代理机构: Thomas, Kayden, Horstemeyer & Risley
- 主分类号: H01L21/44
- IPC分类号: H01L21/44
摘要:
A method for fabricating a pad redistribution layer. First, at least one bonding pad exposed by a first passivation layer is provided. A diffusion barrier layer and a seed layer are then formed over the first passivation layer and the bonding pad. A patterned mask layer is then formed over the seed layer to expose a portion thereof over the bonding pad, and a metal layer is then formed thereon. A sacrificial layer is then formed over the substrate and the sacrificial layer over the patterned mask layer is removed. The conductive film exposed by the metal layer and the remaining sacrificial layer is then removed, leaving a pad redistribution layer for the bonding pad.
公开/授权文献
- US20060019480A1 Method for fabricating pad redistribution layer 公开/授权日:2006-01-26
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