Invention Grant
US07122488B2 High density plasma process for the formation of silicon dioxide on silicon carbide substrates
有权
用于在碳化硅衬底上形成二氧化硅的高密度等离子体工艺
- Patent Title: High density plasma process for the formation of silicon dioxide on silicon carbide substrates
- Patent Title (中): 用于在碳化硅衬底上形成二氧化硅的高密度等离子体工艺
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Application No.: US10812591Application Date: 2004-03-29
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Publication No.: US07122488B2Publication Date: 2006-10-17
- Inventor: Pooran Chandra Joshi , Apostolos T. Voutsas , John W. Hartzell
- Applicant: Pooran Chandra Joshi , Apostolos T. Voutsas , John W. Hartzell
- Applicant Address: US WA Camas
- Assignee: Sharp Laboratories of America, Inc.
- Current Assignee: Sharp Laboratories of America, Inc.
- Current Assignee Address: US WA Camas
- Agency: Law Office of Gerald Maliszewski
- Agent Gerald Maliszewski
- Main IPC: H01L21/469
- IPC: H01L21/469 ; H01L21/31
Abstract:
Methods are provided for forming silicon dioxide (SiO2) on a silicon carbide (SiC) substrate. The method comprises: providing a SiC substrate; supplying an atmosphere including oxygen; performing a high-density (HD) plasma-based process; and, forming a SiO2 layer overlying the SiC substrate. Typically, performing the HD plasma-based process includes connecting a top electrode to an inductively coupled HD plasma source. In one aspect, SiO2 is grown on the SiC substrate. Then, an HD plasma oxidation process is performed that creates a reactive oxygen species and breaks the Si—C bonds in the SiC substrate, to form free Si and C atoms in the SiC substrate. The free Si atoms in the SiC substrate are bonded to the HD plasma-generated reactive oxygen species, and the SiO2 layer is grown.
Public/Granted literature
- US20050215066A1 High density plasma process for the formation of silicon dioxide on silicon carbide substrates Public/Granted day:2005-09-29
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