发明授权
- 专利标题： Aluminum nitride materials and members for use in the production of semiconductors
- 专利标题（中）： 氮化铝材料和用于半导体生产的部件
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申请号： US10785774申请日： 2004-02-24
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公开(公告)号： US07122490B2公开(公告)日： 2006-10-17
- 发明人: Yoshimasa Kobayashi , Toru Hayase , Naomi Teratani , Jun Yoshikawa , Naohito Yamada
- 申请人： Yoshimasa Kobayashi , Toru Hayase , Naomi Teratani , Jun Yoshikawa , Naohito Yamada
- 申请人地址： JP Nagoya
- 专利权人： NGK Insulators, Ltd.
- 当前专利权人： NGK Insulators, Ltd.
- 当前专利权人地址： JP Nagoya
- 代理机构： Burr & Brown
- 优先权： JPP2004-033892 20040210
- 主分类号： C04B35/581
- IPC分类号： C04B35/581 ; C04B35/482
摘要：
A novel aluminum nitride material having a low room temperature volume resistivity is provided. The aluminum nitride material has an aluminum nitride main component and includes at least 0.03 mol % of europium oxide. The aluminum nitride material has an aluminum nitride phase and an europium-aluminum composite oxide phase. An aluminum nitride material also provided having an aluminum nitride main component, wherein a total content of europium oxide and samarium oxide is at least 0.09 mol %. The aluminum nitride material has an aluminum nitride phase and a composite oxide phase containing at least europium and aluminum.