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US07125583B2 Chemical vapor deposition chamber pre-deposition treatment for improved carbon doped oxide thickness uniformity and throughput 失效

Chemical vapor deposition chamber pre-deposition treatment for improved carbon doped oxide thickness uniformity and throughput
摘要：
A method for improving thickness uniformity and throughput of a carbon doped oxide deposition process is described. That method comprises removing pre-deposition steps in a deposition phase. Moreover, helium plasma is added to a pre-clean phase to eliminate the production of dummy wafers.
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