发明授权
- 专利标题： Mask etch processing apparatus
- 专利标题（中）： 掩模蚀刻处理装置
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申请号： US10689783申请日： 2003-10-21
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公开(公告)号： US07128806B2公开(公告)日： 2006-10-31
- 发明人: Khiem Nguyen , Peter Satitpunwaycha , Alfred W. Mak
- 申请人： Khiem Nguyen , Peter Satitpunwaycha , Alfred W. Mak
- 申请人地址： US CA Santa Clara
- 专利权人： Applied Materials, Inc.
- 当前专利权人： Applied Materials, Inc.
- 当前专利权人地址： US CA Santa Clara
- 代理机构： Patterson & Sheridan LLP
- 主分类号： H01L21/306
- IPC分类号： H01L21/306 ; C23F1/00
摘要：
Method and apparatus for supporting and transferring a substrate in a semiconductor wafer processing system are provided. In one aspect, an apparatus is provided for supporting a substrate comprising-a cover ring comprising a base having a bore disposed therethough, the base having an upper surface and one or more raised surfaces disposed adjacent the bore, wherein the raised surface comprise one or more first substrate support members disposed adjacent an edge of the bore and a capture ring disposed on the cover ring, the capture ring comprising a semi-circular annular ring having an inner perimeter corresponding to the bore of the cover ring and one or more second substrate support members disposed on the inner perimeter and adapted to receive a substrate, wherein the capture ring is adapted to mate with the cover ring and form one contiguous raised surface on the cover ring.
公开/授权文献
- US20050082007A1 Mask etch processing apparatus 公开/授权日：2005-04-21
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