Invention Grant
- Patent Title: Mask etch processing apparatus
- Patent Title (中): 掩模蚀刻处理装置
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Application No.: US10689783Application Date: 2003-10-21
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Publication No.: US07128806B2Publication Date: 2006-10-31
- Inventor: Khiem Nguyen , Peter Satitpunwaycha , Alfred W. Mak
- Applicant: Khiem Nguyen , Peter Satitpunwaycha , Alfred W. Mak
- Applicant Address: US CA Santa Clara
- Assignee: Applied Materials, Inc.
- Current Assignee: Applied Materials, Inc.
- Current Assignee Address: US CA Santa Clara
- Agency: Patterson & Sheridan LLP
- Main IPC: H01L21/306
- IPC: H01L21/306 ; C23F1/00

Abstract:
Method and apparatus for supporting and transferring a substrate in a semiconductor wafer processing system are provided. In one aspect, an apparatus is provided for supporting a substrate comprising-a cover ring comprising a base having a bore disposed therethough, the base having an upper surface and one or more raised surfaces disposed adjacent the bore, wherein the raised surface comprise one or more first substrate support members disposed adjacent an edge of the bore and a capture ring disposed on the cover ring, the capture ring comprising a semi-circular annular ring having an inner perimeter corresponding to the bore of the cover ring and one or more second substrate support members disposed on the inner perimeter and adapted to receive a substrate, wherein the capture ring is adapted to mate with the cover ring and form one contiguous raised surface on the cover ring.
Public/Granted literature
- US20050082007A1 Mask etch processing apparatus Public/Granted day:2005-04-21
Information query
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