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公开(公告)号：US07128806B2
公开(公告)日：2006-10-31
申请号：US10689783
申请日：2003-10-21
IPC分类号： H01L21/306 , C23F1/00
CPC分类号： H01L21/68707 , H01J37/321 , H01J37/32623 , H01L21/68735
摘要： Method and apparatus for supporting and transferring a substrate in a semiconductor wafer processing system are provided. In one aspect, an apparatus is provided for supporting a substrate comprising-a cover ring comprising a base having a bore disposed therethough, the base having an upper surface and one or more raised surfaces disposed adjacent the bore, wherein the raised surface comprise one or more first substrate support members disposed adjacent an edge of the bore and a capture ring disposed on the cover ring, the capture ring comprising a semi-circular annular ring having an inner perimeter corresponding to the bore of the cover ring and one or more second substrate support members disposed on the inner perimeter and adapted to receive a substrate, wherein the capture ring is adapted to mate with the cover ring and form one contiguous raised surface on the cover ring.
摘要翻译： 提供了用于在半导体晶片处理系统中支撑和转移衬底的方法和装置。 在一个方面，提供了一种用于支撑衬底的装置，包括：盖环，包括具有设置在其上的孔的基部，所述基部具有上表面和邻近所述孔设置的一个或多个凸起表面，其中所述凸起表面包括一个或 邻近孔的第一衬底支撑构件和设置在盖环上的捕获环，捕获环包括半圆环形环，其具有对应于盖环的孔的内周边和一个或多个第二衬底 支撑构件，其布置在内周边上并且适于接收基底，其中所述捕获环适于与所述盖环配合并在所述盖环上形成一个相邻的凸起表面。
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公开(公告)号：US07879151B2
公开(公告)日：2011-02-01
申请号：US11530676
申请日：2006-09-11
IPC分类号： C23C16/00 , C23C16/458 , H01L21/306
CPC分类号： H01L21/68707 , H01J37/321 , H01J37/32623 , H01L21/68735
摘要： Method and apparatus for supporting and transferring a substrate in a semiconductor wafer processing system are provided. In one aspect, an apparatus is provided for supporting a substrate comprising a cover ring comprising a base having a bore disposed therethough, the base having an upper surface and one or more raised surfaces disposed adjacent the bore, wherein the raised surface comprise one or more first substrate support members disposed adjacent an edge of the bore and a capture ring disposed on the cover ring, the capture ring comprising a semi-circular annular ring having an inner perimeter corresponding to the bore of the cover ring and one or more second substrate support members disposed on the inner perimeter and adapted to receive a substrate, wherein the capture ring is adapted to mate with the cover ring and form one contiguous raised surface on the cover ring.
摘要翻译： 提供了用于在半导体晶片处理系统中支撑和转移衬底的方法和装置。 在一个方面，提供了一种用于支撑衬底的装置，其包括盖环，该盖环包括其上设置有孔的基部，所述基部具有上表面和邻近所述孔布置的一个或多个凸起表面，其中所述凸起表面包括一个或多个 第一衬底支撑构件邻近孔的边缘设置，并且捕获环设置在覆盖环上，捕获环包括半圆环形环，其具有对应于盖环的孔的内周边和一个或多个第二衬底支撑件 设置在内周上并适于接收基底的构件，其中捕获环适于与盖环配合并在盖环上形成一个连续的凸起表面。
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公开(公告)号：US07682984B2
公开(公告)日：2010-03-23
申请号：US11531467
申请日：2006-09-13
IPC分类号： H01L21/302
CPC分类号： G03F1/80 , H01J37/321 , H01J37/32935
摘要： A photomask etch chamber, which includes a substrate support member disposed inside the chamber. The substrate support member is configured to support a photomask substrate. The chamber further includes a ceiling disposed on the chamber and an endpoint detection system configured to detect a peripheral region of the photomask substrate.
摘要翻译： 光掩模蚀刻室，其包括设置在室内的基板支撑构件。 衬底支撑构件被配置为支撑光掩模衬底。 腔室还包括设置在腔室上的天花板和配置成检测光掩模衬底的周边区域的端点检测系统。
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公开(公告)号：US20070023393A1
公开(公告)日：2007-02-01
申请号：US11531467
申请日：2006-09-13
申请人： Khiem Nguyen , Peter Satitpunwaycha , Alfred Mak
发明人： Khiem Nguyen , Peter Satitpunwaycha , Alfred Mak
CPC分类号： G03F1/80 , H01J37/321 , H01J37/32935
摘要： A photomask etch chamber, which includes a substrate support member disposed inside the chamber. The substrate support member is configured to support a photomask substrate. The chamber further includes a ceiling disposed on the chamber and an endpoint detection system configured to detect a peripheral region of the photomask substrate.
摘要翻译： 光掩模蚀刻室，其包括设置在室内的基板支撑构件。 衬底支撑构件被配置为支撑光掩模衬底。 腔室还包括设置在腔室上的天花板和配置成检测光掩模衬底的周边区域的端点检测系统。
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公开(公告)号：US20070007660A1
公开(公告)日：2007-01-11
申请号：US11530676
申请日：2006-09-11
申请人： Khiem Nguyen , Peter Satitpunwaycha , Alfred Mak
发明人： Khiem Nguyen , Peter Satitpunwaycha , Alfred Mak
IPC分类号： H01L23/52
CPC分类号： H01L21/68707 , H01J37/321 , H01J37/32623 , H01L21/68735
摘要： Method and apparatus for supporting and transferring a substrate in a semiconductor wafer processing system are provided. In one aspect, an apparatus is provided for supporting a substrate comprising a cover ring comprising a base having a bore disposed therethough, the base having an upper surface and one or more raised surfaces disposed adjacent the bore, wherein the raised surface comprise one or more first substrate support members disposed adjacent an edge of the bore and a capture ring disposed on the cover ring, the capture ring comprising a semi-circular annular ring having an inner perimeter corresponding to the bore of the cover ring and one or more second substrate support members disposed on the inner perimeter and adapted to receive a substrate, wherein the capture ring is adapted to mate with the cover ring and form one contiguous raised surface on the cover ring.
摘要翻译： 提供了用于在半导体晶片处理系统中支撑和转移衬底的方法和装置。 在一个方面，提供了一种用于支撑衬底的装置，其包括盖环，该盖环包括其上设置有孔的基部，所述基部具有上表面和邻近所述孔布置的一个或多个凸起表面，其中所述凸起表面包括一个或多个 第一衬底支撑构件邻近孔的边缘设置，并且捕获环设置在覆盖环上，捕获环包括半圆环形环，其具有对应于盖环的孔的内周边和一个或多个第二衬底支撑件 设置在内周上并适于接收基底的构件，其中捕获环适于与盖环配合并在盖环上形成一个连续的凸起表面。
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公开(公告)号：US20050082007A1
公开(公告)日：2005-04-21
申请号：US10689783
申请日：2003-10-21
申请人： Khiem Nguyen , Peter Satitpunwaycha , Alfred Mak
发明人： Khiem Nguyen , Peter Satitpunwaycha , Alfred Mak
IPC分类号： H01J37/32 , H01L21/687 , H01L21/44
CPC分类号： H01L21/68707 , H01J37/321 , H01J37/32623 , H01L21/68735
摘要： Method and apparatus for supporting and transferring a substrate in a semiconductor wafer processing system are provided. In one aspect, an apparatus is provided for supporting a substrate comprising-a cover ring comprising a base having a bore disposed therethough, the base having an upper surface and one or more raised surfaces disposed adjacent the bore, wherein the raised surface comprise one or more first substrate support members disposed adjacent an edge of the bore and a capture ring disposed on the cover ring, the capture ring comprising a semi-circular annular ring having an inner perimeter corresponding to the bore of the cover ring and one or more second substrate support members disposed on the inner perimeter and adapted to receive a substrate, wherein the capture ring is adapted to mate with the cover ring and form one contiguous raised surface on the cover ring.
摘要翻译： 提供了用于在半导体晶片处理系统中支撑和转移衬底的方法和装置。 在一个方面，提供了一种用于支撑衬底的装置，包括：盖环，包括具有设置在其上的孔的基部，所述基部具有上表面和邻近所述孔设置的一个或多个凸起表面，其中所述凸起表面包括一个或 邻近孔的第一衬底支撑构件和设置在盖环上的捕获环，捕获环包括半圆环形环，其具有对应于盖环的孔的内周边和一个或多个第二衬底 支撑构件，其布置在内周边上并且适于接收基底，其中所述捕获环适于与所述盖环配合并在所述盖环上形成一个相邻的凸起表面。
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公开(公告)号：US20050067103A1
公开(公告)日：2005-03-31
申请号：US10672420
申请日：2003-09-26
申请人： Khiem Nguyen , Peter Satitpunwaycha , Alfred Mak
发明人： Khiem Nguyen , Peter Satitpunwaycha , Alfred Mak
CPC分类号： G03F1/80 , H01J37/321 , H01J37/32935
摘要： A photomask etch chamber, which includes a substrate support member disposed inside the chamber. The substrate support member is configured to support a photomask substrate. The chamber further includes a ceiling disposed on the chamber and an endpoint detection system configured to detect a peripheral region of the photomask substrate.
摘要翻译： 光掩模蚀刻室，其包括设置在室内的基板支撑构件。 衬底支撑构件被配置为支撑光掩模衬底。 腔室还包括设置在腔室上的天花板和配置成检测光掩模衬底的周边区域的端点检测系统。
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公开(公告)号：US20050133166A1
公开(公告)日：2005-06-23
申请号：US10782300
申请日：2004-02-18
IPC分类号： C23C16/458 , H01L21/00 , H01L21/687 , C23F1/00
CPC分类号： H01L21/68735 , H01J37/321 , H01J2237/2001 , H01L21/67069 , H01L21/68785
摘要： The present invention generally provides an improved pedestal for supporting a substrate. The pedestal has greatest application during a plasma etching process, such as for a quartz photomask, or “reticle.” The pedestal defines a body, and a substrate support base along an upper surface of the body. The substrate support base has an outer edge, and an intermediate substrate support ridge for receiving and supporting the substrate. At least a portion of the substrate support base outside of the intermediate substrate support ridge is fabricated from a dielectric material. The purpose is to couple greater RF power through the reticle in order to enhance the plasma etching process.
摘要翻译： 本发明通常提供一种用于支撑基底的改进的基座。 基座在等离子体蚀刻过程中具有最大的应用，例如石英光掩模或“掩模版”。 基座限定主体，以及沿着主体的上表面的基板支撑基座。 基板支撑基座具有外边缘，以及用于接收和支撑基板的中间基板支撑脊。 中间基板支撑脊外侧的基板支撑基座的至少一部分由电介质材料制成。 目的是通过光罩耦合更大的RF功率，以增强等离子体蚀刻工艺。
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公开(公告)号：US20120321786A1
公开(公告)日：2012-12-20
申请号：US13162707
申请日：2011-06-17
申请人： Peter Satitpunwaycha , Kent Child
发明人： Peter Satitpunwaycha , Kent Child
IPC分类号： C23C16/455
CPC分类号： C23C16/45565 , C23C16/4401 , C23C16/4408 , C23C16/45519 , C23C16/46 , C23C16/52
摘要： A gas distribution structure for supplying reactant gases and purge gases to independent process cells to deposit thin films on separate regions of a substrate is described. Each process cell has an associated ring purge and exhaust manifold to prevent reactive gases from forming deposits on the surface of the wafer between the isolated regions. Each process cell has an associated showerhead for conveying the reactive gases to the substrate. The showerheads can be independently rotated to simulate the rotation parameter for the deposition process.
摘要翻译： 描述了用于将反应气体和吹扫气体供应到独立过程单元以在衬底的分离区域上沉积薄膜的气体分配结构。 每个处理单元具有相关联的清洗和排出歧管，以防止反应气体在隔离区域之间在晶片表面上形成沉积物。 每个处理单元具有用于将反应性气体输送到基底的相关联的淋浴头。 淋浴头可独立旋转以模拟沉积过程的旋转参数。
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10.发明申请公开(公告)号：US20090047881A1
公开(公告)日：2009-02-19
申请号：US11838653
申请日：2007-08-14
IPC分类号： B24B7/04 , H01L21/461
CPC分类号： H01L21/67046 , B24B37/00 , C25D17/00 , C25D21/12 , H01L21/67051 , H01L21/68764 , H01L21/68785
摘要： Combinatorial processing including rotation and movement within a region is described, including defining multiple regions of at least one substrate, processing the multiple regions of the at least one substrate in a combinatorial manner, rotating a head in one of the multiple regions to perform the processing, and repositioning the head relative to the one of the multiple regions while rotating the head during the processing.
摘要翻译： 描述包括区域内的旋转和移动的组合处理，包括限定至少一个基板的多个区域，以组合的方式处理至少一个基板的多个区域，在多个区域中的一个区域中旋转头部以执行处理 并且在处理期间旋转头部时，相对于多个区域中的一个重新定位头部。
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