发明授权
US07128941B2 Method for fabricating film bulk acoustic resonator (FBAR) device
有权
制造薄膜体声共振器(FBAR)装置的方法
- 专利标题: Method for fabricating film bulk acoustic resonator (FBAR) device
- 专利标题(中): 制造薄膜体声共振器(FBAR)装置的方法
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申请号: US10852433申请日: 2004-05-25
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公开(公告)号: US07128941B2公开(公告)日: 2006-10-31
- 发明人: Joo Ho Lee
- 申请人: Joo Ho Lee
- 申请人地址: KR Kyungki-Do
- 专利权人: Samsung Electro-Mechanics Co., LTD
- 当前专利权人: Samsung Electro-Mechanics Co., LTD
- 当前专利权人地址: KR Kyungki-Do
- 代理机构: Lowe Hauptman & Berner, LLP.
- 优先权: KR2002-28142 20020521
- 主分类号: B05D5/12
- IPC分类号: B05D5/12 ; H04R17/00
摘要:
A method for fabricating an FBAR device includes (a) preparing a substrate; (b) forming an insulating layer on the substrate; (c) forming a sacrificial layer on the insulating layer; (d) forming a plurality of sacrificial regions for forming air-gaps by selectively removing the sacrificial layer; (e) forming a membrane support layer on the insulating layer with the selectively removed sacrificial layer; (f) forming a membrane layer on the sacrificial regions and the membrane support layer; (g) forming a plurality of active regions on the sacrificial regions of the membrane layer so that a thickness of the active region corresponding to a series resonator differs from a thickness of the active region corresponding to a shunt resonator of the FBAR; (h) forming lower electrodes on the membrane layer including the active regions; (i) forming a piezoelectric layer on the lower electrodes; (j) forming upper electrodes on the piezoelectric layer; and (k) forming the air-gaps by removing the sacrificial regions.