公开(公告)号：US20230272549A1

公开(公告)日：2023-08-31

申请号：US18111091

申请日：2023-02-17

申请人： Jae Hak LEE ,  Byunggeun AHN ,  Joo Ho LEE ,  LNBS Co, Ltd.

发明人： Hyung Soo AHN ,  Jae Hak LEE ,  Byunggeun AHN ,  Joo Ho LEE

IPC分类号： C30B25/08 ,  C30B25/14 ,  C30B25/10 ,  C30B29/40 ,  C30B29/06 ,  C30B29/36 ,  C30B29/08 ,  C30B29/52 ,  C30B29/16 ,  C30B29/62 ,  C30B29/66 ,  C23C16/455 ,  C23C16/46 ,  C23C16/30 ,  C23C16/32 ,  C23C16/40 ,  C23C16/24 ,  C23C16/06

CPC分类号： C30B25/08 ,  C30B25/14 ,  C30B25/10 ,  C30B29/403 ,  C30B29/06 ,  C30B29/36 ,  C30B29/08 ,  C30B29/52 ,  C30B29/16 ,  C30B29/62 ,  C30B29/66 ,  C23C16/455 ,  C23C16/46 ,  C23C16/303 ,  C23C16/325 ,  C23C16/40 ,  C23C16/24 ,  C23C16/06

摘要： An apparatus for manufacturing hexagonal crystals using HVPE includes: a reaction tube; a reaction boat disposed on one side in the reaction tube; a halogenation reaction gas supply pipe for supplying a halogenation reaction gas to the reaction boat; a nitrification reaction gas supply pipe for supplying a nitrification reaction gas to the reaction boat; and a heater for heating the reaction tube. The reaction boat includes a source part for receiving source materials; and a crystal growth part disposed beneath the source part and having a depressed growth mold of a predetermined shape. The source part includes: at least one penetration hole formed on a bottom surface; a first allocating area formed around the at least one penetration hole, for receiving aluminum; and a second allocating area formed around the first allocating area, for receiving a main material of the hexagonal crystal and gallium.

公开(公告)号：US08365070B2

公开(公告)日：2013-01-29

申请号：US12419509

申请日：2009-04-07

申请人： Hee Jun Song ,  Young Hee Park ,  Hyun Sik Shim ,  Jong Gyu Ham ,  Hark Soo Kim ,  Joo Ho Lee ,  Se Hee Lee

发明人： Hee Jun Song ,  Young Hee Park ,  Hyun Sik Shim ,  Jong Gyu Ham ,  Hark Soo Kim ,  Joo Ho Lee ,  Se Hee Lee

IPC分类号： G06F17/00

CPC分类号： G06F17/273 ,  G06F17/2735

摘要： A spelling correction system and method automatically recognizes and corrects misspelled inputs in an electronic device with relatively lower computing power. In a learning process, a misspelling correction dictionary is constructed on the basis of a corpus of accepted words, and context-sensitive strings are selected from among all the strings registered in the dictionary. Context information about the context-sensitive strings is acquired. In an applying process, at least one target string is selected from among all the strings in a user's input sentence through the dictionary. If the target string is one of the context-sensitive strings, the target string is corrected by use of the context information.

摘要翻译： 拼写校正系统和方法以相对较低的计算能力自动识别和纠正电子设备中的拼错输入。 在学习过程中，基于接受词的语料库构建拼写错误校正字典，并且从字典中注册的所有字符串中选择上下文相关的字符串。 获取关于上下文相关字符串的上下文信息。 在应用过程中，通过字典从用户输入句中的所有字符串中选择至少一个目标字符串。 如果目标字符串是上下文相关字符串之一，则使用上下文信息来校正目标字符串。

公开(公告)号：US08288082B2

公开(公告)日：2012-10-16

申请号：US12292027

申请日：2008-11-10

申请人： Chan Wook Baik ,  Junhee Choi ,  Seog Woo Hong ,  Joo Ho Lee

发明人： Chan Wook Baik ,  Junhee Choi ,  Seog Woo Hong ,  Joo Ho Lee

IPC分类号： G03F7/11

CPC分类号： H01J31/127 ,  H01J29/04 ,  H01J2329/0455

摘要： Example embodiments provide a method of fabricating a triode-structure field-emission device. A cathode, an insulating layer, and a gate metal layer may be sequentially formed on a substrate. A first resist pattern having a first opening and a second resist pattern having a second opening smaller than the first opening may be formed to be sequentially laminated on the gate metal layer. Then, the gate metal layer and the insulating layer may be etched using the first resist pattern to form a gate electrode and an insulating layer having a first hole and a second hole corresponding to the first opening. A catalyst layer may be formed on the cathode exposed through the first and second holes using the second resist pattern. After the first resist pattern, second resist pattern, and the catalyst layer on the second resist pattern are removed, an emitter may be formed on the catalyst layer in the second hole.

摘要翻译： 示例性实施例提供了制造三极管结构场致发射器件的方法。 可以在基板上依次形成阴极，绝缘层和栅极金属层。 可以形成具有第一开口的第一抗蚀剂图案和具有小于第一开口的第二开口的第二抗蚀剂图案，以依次层压在栅极金属层上。 然后，可以使用第一抗蚀剂图案蚀刻栅极金属层和绝缘层，以形成具有与第一开口对应的第一孔和第二孔的栅电极和绝缘层。 可以使用第二抗蚀剂图案在通过第一孔和第二孔暴露的阴极上形成催化剂层。 在第一抗蚀剂图案，第二抗蚀剂图案和第二抗蚀剂图案上的催化剂层被去除之后，可以在第二孔中的催化剂层上形成发射极。

公开(公告)号：US08212623B2

公开(公告)日：2012-07-03

申请号：US12801711

申请日：2010-06-22

申请人： Chan-wook Baik ,  Joo-ho Lee

发明人： Chan-wook Baik ,  Joo-ho Lee

IPC分类号： H03B17/00

CPC分类号： H03B17/00

摘要： A terahertz oscillator may include a first insulating layer, an electron emitter on the first insulating layer, adapted to emit an electron beam, and including a cathode, an anode, an oscillating circuit, and a collector sequentially disposed, spaced apart from each other, on the first insulating layer in a direction in which the electron beam is emitted from the electron emitter, wherein the oscillating circuit converts energy of the electron beam to energy of an electromagnetic wave, and wherein the collector collects the electron beam, an output unit adapted to emit the electromagnetic wave from the oscillating circuit to outside of the terahertz oscillator, and an electron emitting material layer. The cathode may include a first curved portion that extends in a direction perpendicular to the first insulating layer. The electron emitting material layer may be on an inner surface of the first curved portion of the cathode.

摘要翻译： 太赫兹振荡器可以包括第一绝缘层，第一绝缘层上的电子发射器，适于发射电子束，并且包括彼此间隔开的顺序设置的阴极，阳极，振荡电路和集电极， 在电子束从电子发射器发射的方向上的第一绝缘层上，其中振荡电路将电子束的能量转换为电磁波的能量，并且其中集电极收集电子束，输出单元适应 以将电磁波从振荡电路发射到太赫兹振荡器外部，以及电子发射材料层。 阴极可以包括沿垂直于第一绝缘层的方向延伸的第一弯曲部分。 电子发射材料层可以在阴极的第一弯曲部分的内表面上。

公开(公告)号：US07615842B2

公开(公告)日：2009-11-10

申请号：US11473079

申请日：2006-06-23

申请人： Joo-ho Lee ,  Hae-seok Park ,  Byeoung-ju Ha ,  Seog-woo Hong ,  Hyung Choi ,  In-sang Song

发明人： Joo-ho Lee ,  Hae-seok Park ,  Byeoung-ju Ha ,  Seog-woo Hong ,  Hyung Choi ,  In-sang Song

IPC分类号： H01L29/00

CPC分类号： H03H9/0542 ,  H03H9/105

摘要： An inductor integrated chip and fabrication method thereof is provided. The inductor integrated chip includes a wafer; an inductor bonded on a surface of the wafer; a circuit element formed on the surface of the wafer and coupled to a first end of the inductor; a packaging wafer connected to the surface of the wafer and packaging the inductor and the circuit element; and a connecting electrode formed on the packaging wafer and connected to a second end of the inductor. The method includes forming an inductor and a circuit element on a surface of a wafer, wherein the circuit element is coupled to a first end of the inductor; forming a connecting electrode on a packaging wafer; and packaging the inductor and the circuit element by joining the wafer and the packaging wafer so as to connect the connecting electrode with a second end of the inductor.

摘要翻译： 提供一种电感器集成芯片及其制造方法。 电感器集成芯片包括晶片; 结合在晶片表面上的电感器; 电路元件，其形成在所述晶片的表面上并且耦合到所述电感器的第一端; 连接到晶片表面并封装电感器和电路元件的封装晶片; 以及形成在封装晶片上并连接到电感器的第二端的连接电极。 该方法包括在晶片的表面上形成电感器和电路元件，其中电路元件耦合到电感器的第一端; 在封装晶片上形成连接电极; 并且通过接合晶片和封装晶片来封装电感器和电路元件，以将连接电极与电感器的第二端连接。

公开(公告)号：US20090254819A1

公开(公告)日：2009-10-08

申请号：US12419509

申请日：2009-04-07

申请人： Hee jun SONG ,  Young Hee Park ,  Hyun Sik Shim ,  Jong Gyu Ham ,  Hark Soo Kim ,  Joo Ho Lee ,  Se Hee Lee

发明人： Hee jun SONG ,  Young Hee Park ,  Hyun Sik Shim ,  Jong Gyu Ham ,  Hark Soo Kim ,  Joo Ho Lee ,  Se Hee Lee

IPC分类号： G06F17/21

CPC分类号： G06F17/273 ,  G06F17/2735

摘要： A spelling correction system and method automatically recognizes and corrects misspelled inputs in an electronic device with relatively lower computing power. In a learning process, a misspelling correction dictionary is constructed on the basis of a corpus of accepted words, and context-sensitive strings are selected from among all the strings registered in the dictionary. Context information about the context-sensitive strings is acquired. In an applying process, at least one target string is selected from among all the strings in a user's input sentence through the dictionary. If the target string is one of the context-sensitive strings, the target string is corrected by use of the context information.

摘要翻译： 拼写校正系统和方法以相对较低的计算能力自动识别和纠正电子设备中的拼错输入。 在学习过程中，基于接受词的语料库构建拼写错误校正字典，并且从字典中注册的所有字符串中选择上下文相关的字符串。 获取关于上下文相关字符串的上下文信息。 在应用过程中，通过字典从用户输入句中的所有字符串中选择至少一个目标字符串。 如果目标字符串是上下文相关字符串之一，则使用上下文信息来校正目标字符串。

公开(公告)号：US20090233240A1

公开(公告)日：2009-09-17

申请号：US12292027

申请日：2008-11-10

申请人： Chan Wook Baik ,  Junhee Choi ,  Seog Woo Hong ,  Joo Ho Lee

发明人： Chan Wook Baik ,  Junhee Choi ,  Seog Woo Hong ,  Joo Ho Lee

IPC分类号： G03F7/20

CPC分类号： H01J31/127 ,  H01J29/04 ,  H01J2329/0455

摘要： Example embodiments provide a method of fabricating a triode-structure field-emission device. A cathode, an insulating layer, and a gate metal layer may be sequentially formed on a substrate. A first resist pattern having a first opening and a second resist pattern having a second opening smaller than the first opening may be formed to be sequentially laminated on the gate metal layer. Then, the gate metal layer and the insulating layer may be etched using the first resist pattern to form a gate electrode and an insulating layer having a first hole and a second hole corresponding to the first opening. A catalyst layer may be formed on the cathode exposed through the first and second holes using the second resist pattern. After the first resist pattern, second resist pattern, and the catalyst layer on the second resist pattern are removed, an emitter may be formed on the catalyst layer in the second hole.

摘要翻译： 示例性实施例提供了制造三极管结构场致发射器件的方法。 可以在基板上依次形成阴极，绝缘层和栅极金属层。 可以形成具有第一开口的第一抗蚀剂图案和具有小于第一开口的第二开口的第二抗蚀剂图案，以依次层压在栅极金属层上。 然后，可以使用第一抗蚀剂图案蚀刻栅极金属层和绝缘层，以形成具有与第一开口对应的第一孔和第二孔的栅电极和绝缘层。 可以使用第二抗蚀剂图案在通过第一孔和第二孔暴露的阴极上形成催化剂层。 在第一抗蚀剂图案，第二抗蚀剂图案和第二抗蚀剂图案上的催化剂层被去除之后，可以在第二孔中的催化剂层上形成发射极。

公开(公告)号：US09074134B2

公开(公告)日：2015-07-07

申请号：US13819516

申请日：2011-11-10

申请人： Sang Chul Bang ,  Sookie S. Bang ,  Seong Rok Choi ,  Seok Jin Lee ,  Joo Ho Lee ,  Jong Sun Kim

发明人： Sang Chul Bang ,  Sookie S. Bang ,  Seong Rok Choi ,  Seok Jin Lee ,  Joo Ho Lee ,  Jong Sun Kim

IPC分类号： C09K17/42 ,  C09K17/40 ,  C12N1/20 ,  C04B24/00 ,  C03C15/00 ,  C12P3/00 ,  C04B26/00 ,  C04B28/10

CPC分类号： C09K17/42 ,  C03C15/00 ,  C04B24/00 ,  C04B26/00 ,  C04B28/10 ,  C09K17/40 ,  C12N1/20 ,  C12P3/00 ,  Y02W30/97 ,  C04B14/06 ,  C04B14/28 ,  C04B18/24 ,  C04B2103/0001 ,  C04B16/0633 ,  C04B24/126

摘要： The present invention relates to a method of manufacturing soil reinforced by microbe-based bio-binders and soil produced by the method. The bio-binders are not harmful to humans, do not cause environmental pollution and secure sufficiently the soil strength and resistance against wind. According to the method, the soil is prepared by binding sand whose major components are silica and alumina, ureolytic microbes, urea, calcium ion, and polymer fibers, and the content of polymer fibers in sand ranges from 0.05 wt % to 5 wt %. In addition, it is preferable that the microbes provide CaCO3 at a rate at 1˜7×10−9 g CaCO3 ppt cell−1 hr−1 under optimum conditions.

摘要翻译： 本发明涉及一种通过微生物生物粘合剂和由该方法生产的土壤增强土壤的方法。 生物粘合剂对人体无害，不会造成环境污染，充分保证土壤强度和抗风能力。 根据该方法，通过将主要成分为二氧化硅和氧化铝，尿素分解微生物，尿素，钙离子和聚合物纤维的砂结合在一起制备土壤，砂中聚合物纤维的含量为0.05wt％至5wt％。 此外，优选微生物在最佳条件下以1〜7×10-9g CaCO 3 ppt细胞-1h -1的速率提供CaCO 3。

公开(公告)号：US08725221B2

公开(公告)日：2014-05-13

申请号：US12649211

申请日：2009-12-29

申请人： Joo-Ho Lee ,  Hyun-Suk Yang ,  Bong-Kuk Hong ,  Deok-Yong Chung

发明人： Joo-Ho Lee ,  Hyun-Suk Yang ,  Bong-Kuk Hong ,  Deok-Yong Chung

IPC分类号： H04W88/02

CPC分类号： H04M1/026 ,  G03B29/00 ,  H04M1/0272

摘要： A portable terminal is provided and the portable terminal includes a terminal body, a projector operatively connected to the terminal body, and a door movably mounted to the terminal body, the door being moveable between a first position covering the projector and a second position exposing the projector.

摘要翻译： 提供便携式终端，并且便携式终端包括终端主体，可操作地连接到终端主体的投影仪和可移动地安装到终端主体的门，门能够在覆盖投影仪的第一位置和第二位置之间移动， 投影机。

公开(公告)号：US08716766B2

公开(公告)日：2014-05-06

申请号：US13523554

申请日：2012-06-14

申请人： Chang-seung Lee ,  Young Bae Kim ,  Young Jun Yun ,  Yong Sung Kim ,  David Seo ,  Joo-ho Lee

发明人： Chang-seung Lee ,  Young Bae Kim ,  Young Jun Yun ,  Yong Sung Kim ,  David Seo ,  Joo-ho Lee

IPC分类号： H01L29/76

CPC分类号： H01L29/7391 ,  B82Y10/00 ,  B82Y40/00 ,  H01L27/2445 ,  H01L27/283 ,  H01L27/3262 ,  H01L29/1606 ,  H01L29/6603 ,  H01L29/66037 ,  H01L29/7781 ,  H01L29/861 ,  H01L33/34 ,  H01L45/04 ,  H01L45/06 ,  H01L45/085 ,  H01L45/1233 ,  H01L45/14 ,  H01L45/144 ,  H01L45/146 ,  H01L45/147

摘要： Graphene semiconductor device, a method of manufacturing a graphene semiconductor device, an organic light emitting display and a memory, include forming a multilayered member including a sacrificial substrate, a sacrificial layer, and a semiconductor layer deposited in sequence, forming a transfer substrate on the semiconductor layer, forming a first laminate including the transfer substrate and the semiconductor layer by removing the sacrificial layer to separate the sacrificial substrate from the semiconductor layer, forming a second laminate by forming a graphene layer on a base substrate, combining the first laminate and the second laminate such that the semiconductor layer contacts the graphene layer, and removing the transfer substrate.

摘要翻译： 石墨烯半导体器件，石墨烯半导体器件的制造方法，有机发光显示器和存储器，包括形成包括依次沉积的牺牲基板，牺牲层和半导体层的多层元件，在其上形成转印衬底 半导体层，通过去除所述牺牲层以形成包含所述转移衬底和所述半导体层的第一层压体，以将所述牺牲衬底与所述半导体层分离，通过在基底衬底上形成石墨烯层而形成第二层压体，将所述第一层压体和 第二层压体，使得半导体层接触石墨烯层，并且去除转移基板。