发明授权
- 专利标题： Semiconductor device having two distinct sioch layers
- 专利标题（中）： 半导体器件具有两个不同的透镜层
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申请号： US10767786申请日： 2004-01-29
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公开(公告)号： US07132732B2公开(公告)日： 2006-11-07
- 发明人: Koichi Ohto , Tatsuya Usami , Noboru Morita , Sadayuki Ohnishi , Koji Arita , Ryohei Kitao , Yoichi Sasaki
- 申请人： Koichi Ohto , Tatsuya Usami , Noboru Morita , Sadayuki Ohnishi , Koji Arita , Ryohei Kitao , Yoichi Sasaki
- 申请人地址： JP Kanagawa
- 专利权人： NEC Electronics Corporation
- 当前专利权人： NEC Electronics Corporation
- 当前专利权人地址： JP Kanagawa
- 代理机构： Scully, Scott, Murphy & Presser, P.C.
- 优先权： JP2003-021076 20030129; JP2004-018079 20040127
- 主分类号： H01L23/58
- IPC分类号： H01L23/58 ; H01L23/48
摘要：
A semiconductor device has a semiconductor substrate, and a multi-layered wiring arrangement provided thereon. The multi-layered wring arrangement includes at least one insulating layer structure having a metal wiring pattern formed therein. The insulating layer structure includes a first SiOCH layer, a second SiOCH layer formed on the first SiOCH layer, and a silicon dioxide (SiO2) layer formed on the second SiOCH layer. The second SiOCH layer features a carbon (C) density lower than that of the first SiOCH layer, a hydrogen (H) density lower than that of the first SiOCH layer, and an oxygen (O) density higher than that of the first SiOCH layer.
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