Invention Grant
- Patent Title: Fractal structure and method of forming it
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Application No.: US10089857Application Date: 2001-08-24
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Publication No.: US07135071B2Publication Date: 2006-11-14
- Inventor: Ryuichi Ugajin
- Applicant: Ryuichi Ugajin
- Applicant Address: JP Tokyo
- Assignee: Sony Corporation
- Current Assignee: Sony Corporation
- Current Assignee Address: JP Tokyo
- Agency: Sonnenschein Nath & Rosenthal LLP
- Priority: JP2000-255236 20000825; JP2000-333395 20001031
- International Application: PCT/JP01/07248 WO 20010824
- International Announcement: WO02/17410 WO 20020228
- Main IPC: C30B25/02
- IPC: C30B25/02

Abstract:
A fractal structure is formed to have a plurality of regions different in fractal dimension characterizing the self-similarity. The fractal structure is grown from one or more origins under growth conditions providing a first fractal dimension in a first portion of the growth process from the start point of time to a first point of time, and under growth conditions providing a second fractal dimension lower than the first fractal dimension in another portion of the growth process from the first point of time to a second point of time. By adjusting the timing for changing the growth conditions, the fractal structure is controlled in nature of phase transition, such as critical temperature for ferromagnetic phase transition, which occurs in the fractal structure. For enhancing the controllability, the first fractal dimension is preferably larger than 2.7 and the second fractal dimension is preferably smaller than 2.3.
Public/Granted literature
- US20020195598A1 Fractal structure and method of forming it Public/Granted day:2002-12-26
Information query
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