公开(公告)号：US06584234B2

公开(公告)日：2003-06-24

申请号：US09977722

申请日：2001-10-15

Applicant: Shoji Kanamaru ,  Yoshihiko Kuroki ,  Yoshifumi Mori ,  Ryuichi Ugajin ,  Hitoshi Kimura

Inventor： Shoji Kanamaru ,  Yoshihiko Kuroki ,  Yoshifumi Mori ,  Ryuichi Ugajin ,  Hitoshi Kimura

IPC: G06K936

CPC classification number: G06T5/10 ,  G06T5/002 ,  G06T2207/20056

Abstract: An image processing apparatus capable of extracting widely viewed features of an entire image and speedily performing image processing, and a method and an information recording medium for such processing. Image data of an original image is obtained by imaging the entire original image with an image pickup unit at a time. An amplitude distribution of a signal is obtained from the image data by fast Fourier transform performed by a fast Fourier transform section of a signal processing unit. An amplitude replacement section replaces the amplitude distribution with a predetermined function using the distance from a center of a frequency plane as a parameter. An inverse fast Fourier transform section forms an image corresponding to the original image by inverse fast Fourier transform from a phase distribution of points obtained by the fast Fourier transform and from an amplitude distribution obtained by the above-described replacement.

公开(公告)号：US06525337B1

公开(公告)日：2003-02-25

申请号：US09786526

申请日：2001-06-11

Applicant: Ryuichi Ugajin ,  Yoshihiko Kuroki

Inventor： Ryuichi Ugajin ,  Yoshihiko Kuroki

IPC: H01L2906

CPC classification number: H01L33/06 ,  B82Y10/00 ,  B82Y20/00 ,  H01L29/127 ,  H01L33/30 ,  H01S5/1053 ,  H01S5/34 ,  H01S5/3412

Abstract: An optical and/or electronic device is operated by degeneracy of density of states caused by confinement of electrons in a fractal region having a self-similarity. An AlGaAs/GaAs light emitting device is configured by distributing GaAs quantum dots in a fractal arrangement and confining them in i-type AlGaAs. A single-electron state of the quantum dot array exhibits degeneracy of density of states. Further, a strong quantum chaos is generated to bring about degeneracy of density of states by applying a random magnetic field by addition of a magnetic impurity to the region having a self-similarity.

Abstract translation: 光学和/或电子器件通过由具有自相似性的分形区域中的电子的限制引起的状态密度的退化进行操作。 AlGaAs / GaAs发光器件通过以分布布置分布GaAs量子点并将其限制在i型AlGaAs中来构造。 量子点阵列的单电子态表现出状态密度的退化。 此外，通过在具有自相似性的区域中添加磁性杂质来施加随机磁场，产生强的量子混沌，从而导致状态密度的简并。

公开(公告)号：US5643828A

公开(公告)日：1997-07-01

申请号：US574785

申请日：1995-12-19

Applicant: Ryuichi Ugajin ,  Ichiro Hase ,  Kazumasa Nomoto

Inventor： Ryuichi Ugajin ,  Ichiro Hase ,  Kazumasa Nomoto

IPC: H01L29/12 ,  H01L21/20

CPC classification number: B82Y10/00 ,  H01L29/125 ,  H01L29/127 ,  Y10S438/962

Abstract: A method of manufacturing a quantum device such as a coupled quantum boxes device are disclosed. The quantum device comprises: a semiconductor substrate; a plurality of box portions made of a first semiconductor; and a layer made of a second semiconductor provided on circumferences of the box portions, a plurality of quantum boxes being provided with the box portions and the layer of the second semiconductor. The manufacturing method comprises the steps of: making a plurality of box portions of a first semiconductor on a semiconductor substrate; and covering circumferences of the box portions with a layer of a second semiconductor, a plurality of quantum boxes being provided with the box portions and the layer of the second semiconductor.

Abstract translation: 公开了一种制造诸如耦合量子盒装置的量子器件的方法。 量子器件包括：半导体衬底; 由第一半导体制成的多个盒部; 以及由盒部分周围设置的由第二半导体制成的层，多个量子盒设置有盒部分和第二半导体层。 该制造方法包括以下步骤：在半导体衬底上制造第一半导体的多个盒部; 并且用第二半导体层覆盖所述盒部分的周边，多个量子盒设置有所述盒部分和所述第二半导体层。

公开(公告)号：US07135071B2

公开(公告)日：2006-11-14

申请号：US10089857

申请日：2001-08-24

Applicant: Ryuichi Ugajin

Inventor： Ryuichi Ugajin

IPC: C30B25/02

CPC classification number: B82Y25/00 ,  B82Y40/00 ,  C30B25/105 ,  C30B29/04 ,  C30B29/605 ,  H01F41/30

Abstract: A fractal structure is formed to have a plurality of regions different in fractal dimension characterizing the self-similarity. The fractal structure is grown from one or more origins under growth conditions providing a first fractal dimension in a first portion of the growth process from the start point of time to a first point of time, and under growth conditions providing a second fractal dimension lower than the first fractal dimension in another portion of the growth process from the first point of time to a second point of time. By adjusting the timing for changing the growth conditions, the fractal structure is controlled in nature of phase transition, such as critical temperature for ferromagnetic phase transition, which occurs in the fractal structure. For enhancing the controllability, the first fractal dimension is preferably larger than 2.7 and the second fractal dimension is preferably smaller than 2.3.

公开(公告)号：US07061007B1

公开(公告)日：2006-06-13

申请号：US09868360

申请日：2000-10-17

Applicant: Ryuichi Ugajin ,  Yoshihiko Kuroki ,  Masakazu Ukita

Inventor： Ryuichi Ugajin ,  Yoshihiko Kuroki ,  Masakazu Ukita

IPC: H01L29/06

CPC classification number: G11B5/02 ,  B82Y10/00 ,  B82Y25/00 ,  G11B9/14 ,  G11B2005/0002 ,  H01F1/009 ,  H01F10/007 ,  H01L49/003

Abstract: Phase transition is controlled by controlling fractal dimension of a fractal-coupled structure overall or locally. For a magnetic material, ferromagnetic phase transition temperature of magnetic particles arranged to have self-similarity is controlled by fractal dimension. For a half-filled electron system confined in a treelike fractal, Mott transition is controlled by fractal dimension of the system. Stronger quantum chaos than conventional ones is generated by adding magnetic impurities to the fractal-coupled structure, and through this process, Anderson transition is controlled.

Abstract translation: 通过整体或局部控制分形耦合结构的分形维数来控制相变。 对于磁性材料，排列成具有自相似性的磁性颗粒的铁磁相变温度由分形维数控制。 对于限制在树状分形中的半填充电子系统，Mott过渡由系统的分形维数控制。 通过向分形耦合结构中添加磁性杂质产生比常规的更强的量子混沌，并且通过该过程，控制安德森转换。

公开(公告)号：US06353689B1

公开(公告)日：2002-03-05

申请号：US09189956

申请日：1998-11-12

Applicant: Shoji Kanamaru ,  Yoshihiko Kuroki ,  Yoshifumi Mori ,  Ryuichi Ugajin ,  Hitoshi Kimura

Inventor： Shoji Kanamaru ,  Yoshihiko Kuroki ,  Yoshifumi Mori ,  Ryuichi Ugajin ,  Hitoshi Kimura

IPC: G06K936

CPC classification number: G06T5/10 ,  G06T5/002 ,  G06T2207/20056

Abstract: An image processing apparatus capable of extracting widely viewed features of an entire image and speedily performing image processing, and a method and an information recording medium for such processing. Image data of an original image is obtained by imaging the entire original image with an image pickup unit at a time. An amplitude distribution of a signal is obtained from the image data by fast Fourier transform performed by a fast Fourier transform section of a signal processing unit. An amplitude replacement section replaces the amplitude distribution with a predetermined function using the distance from a center of a frequency plane as a parameter. An inverse fast Fourier transform section forms an image corresponding to the original image by inverse fast Fourier transform from a phase distribution of points obtained by the fast Fourier transform and from an amplitude distribution obtained by the above-described replacement.

Abstract translation: 能够提取整个图像的广泛观看特征并快速执行图像处理的图像处理装置，以及用于这种处理的方法和信息记录介质。 通过用图像拾取单元一次成像整个原始图像来获得原始图像的图像数据。 通过由信号处理单元的快速傅里叶变换部执行的快速傅里叶变换，从图像数据获得信号的幅度分布。 幅度替换部分使用从频率平面的中心的距离作为参数，用预定的功能代替幅度分布。 逆快速傅立叶变换部分通过快速傅立叶逆变换从与通过快速傅里叶变换获得的点的相位分布和通过上述替换获得的幅度分布形成对应于原始图像的图像。

公开(公告)号：US5204588A

公开(公告)日：1993-04-20

申请号：US819492

申请日：1992-01-10

Applicant: Ryuichi Ugajin ,  Akira Ishibashi

Inventor： Ryuichi Ugajin ,  Akira Ishibashi

IPC: H01J3/02 ,  H01J21/10 ,  H01L29/66 ,  H01L29/772 ,  H03K17/54

CPC classification number: B82Y10/00 ,  H01J21/105 ,  H01J3/022 ,  H01L29/66977 ,  H01L29/772 ,  H03K17/545

Abstract: Disclosed is hererin a quantum phase interference transistor comprising: an emitter for emitting electron waves into a vacuum; a gate electrode for controlling the phase difference between a plurality of electron waves; and a collector for collecting the electron waves; characterized in that the gate electrode has the construction of a capacitor.

公开(公告)号：US06392914B1

公开(公告)日：2002-05-21

申请号：US09210583

申请日：1998-12-14

Applicant: Yoshihiko Kuroki ,  Yoshifumi Mori ,  Ryuichi Ugajin

Inventor： Yoshihiko Kuroki ,  Yoshifumi Mori ,  Ryuichi Ugajin

IPC: G11C1300

CPC classification number: H01L29/127 ,  B82Y10/00 ,  G06N99/002 ,  G11C13/04 ,  G11C2216/08 ,  Y10S977/712 ,  Y10S977/773 ,  Y10S977/774 ,  Y10S977/943

Abstract: A nonlinear coupling oscillator array is configured in such a manner that, for example, two layers in each of which a number of quantum dots as oscillators are arranged two-dimensionally are laid one on another. Adjacent quantum dots in the upper layer have tunnel coupling that exhibits a nonlinear current-voltage characteristic. The quantum dots in the upper layer receive an input of initial data/bias current, and each quantum dot in the upper layer is coupled with one quantum dot in the lower layer via a gate function having a time constant. Adjacent quantum dots in the lower layer do not interact with each other and the quantum dots in the lower layer are connected to the ground. For example, initial data are input by generating electron-hole pairs by applying light having an intensity profile corresponding to data, and injecting resulting electrons into the quantum dots of the upper layer. For example, bias current is given by applying light having an intensity profile that is constant temporally and spatially. As time elapses from the input of initial data, there appears a dynamic pattern, that is, a rotating spiral pattern, corresponding to the initial data. The data is stored in this manner.

Abstract translation: 非线性耦合振荡器阵列以这样的方式配置，例如，其中每个中的两个作为振荡器的量子点二维布置的两个层叠在一起。 上层的相邻量子点具有呈现非线性电流 - 电压特性的隧道耦合。 上层的量子点接收初始数据/偏置电流的输入，并且上层中的每个量子点通过具有时间常数的栅极功能与下层中的一个量子点耦合。 下层中相邻的量子点彼此不相互作用，下层的量子点连接到地面。 例如，通过施加具有与数据对应的强度分布的光，通过产生电子 - 空穴对来输入初始数据，并将所得电子注入上层的量子点。 例如，通过施加具有在时间上和空间上恒定的强度分布的光来给出偏置电流。 随着初始数据输入的时间的流逝，出现一个动态模式，即旋转的螺旋模式，对应于初始数据。 数据以这种方式存储。

公开(公告)号：US5719407A

公开(公告)日：1998-02-17

申请号：US535814

申请日：1995-09-28

Applicant: Ryuichi Ugajin

Inventor： Ryuichi Ugajin

IPC: H01L29/06 ,  H01L29/15 ,  H01L29/66 ,  H01L33/06 ,  H01S5/183 ,  H01S5/34 ,  H01L29/205 ,  H01L29/88

CPC classification number: B82Y20/00 ,  B82Y10/00 ,  H01L33/06 ,  H01S5/183 ,  H01S5/3412

Abstract: A collective element of quantum boxes includes a plurality of the first quantum boxes (QD.sub.1) arranged within the first surface, between which conduction of electrons is allowed, a plurality of the second quantum boxes (QD.sub.2) arranged within the second surface corresponding to the plural first quantum boxes (QD.sub.1) between which conduction of electrons and holes is not substantially allowed, and a plurality of the third quantum boxes (QD.sub.3) arranged within the third surface corresponding to the plural second quantum boxes (QD.sub.2), between which conduction of holes is allowed.

Abstract translation: 量子箱的集合元件包括布置在第一表面内的多个第一量子盒（QD1），允许电子的传导，多个第二量子盒（QD2）布置在与多个对应的第二表面内的第二表面 基本上不允许电子和空穴传导的第一量子盒（QD1）和布置在对应于多个第二量子盒（QD2）的第三表面内的多个第三量子盒（QD3） 被允许。

公开(公告)号：US5512762A

公开(公告)日：1996-04-30

申请号：US309888

申请日：1994-09-20

Applicant: Toshikazu Suzuki ,  Kazumasa Nomoto ,  Ryuichi Ugajin

Inventor： Toshikazu Suzuki ,  Kazumasa Nomoto ,  Ryuichi Ugajin

IPC: H01L29/68 ,  H01L29/06 ,  H01L29/12 ,  H01L29/80 ,  H01L29/861 ,  H01L31/0328 ,  H01L31/0336

CPC classification number: B82Y10/00 ,  H01L29/127 ,  H01L29/8616

Abstract: A quantum box array comprising a plurality of quantum boxes is made by providing a plurality of box-shaped quantum well portions on a first barrier layer and a second barrier layer covering the quantum well portions. The quantum box array is designed so that interaction energy between electrons or holes is amply larger than transfer energy between the quantum boxes. A control electrode is provided on the second barrier layer to vary the number of electrons or holes in the quantum box array by changing the potential of the control electrode. In spite of using a relatively small number of electrons or holes, the quantum device can suppress fluctuation in density of electrons or holes, can have three or more states, and reduces the power consumption.

Abstract translation: 通过在第一阻挡层和覆盖量子阱部分的第二阻挡层上提供多个箱形量子阱部分来制造包括多个量子箱的量子盒阵列。 量子箱阵列被设计为使得电子或空穴之间的相互作用能量大于量子箱之间的转移能量。 控制电极设置在第二阻挡层上，以通过改变控制电极的电位来改变量子箱阵列中的电子或空穴的数量。 尽管使用相对少量的电子或空穴，量子器件可以抑制电子或空穴的密度波动，但可以具有三个或更多个状态，并降低功耗。