发明授权
- 专利标题： Composite structure with high heat dissipation
- 专利标题（中）： 复合结构散热性好
-
申请号： US11020040申请日： 2004-12-21
-
公开(公告)号： US07135383B2公开(公告)日： 2006-11-14
- 发明人: Bruce Faure , Alice Boussagol
- 申请人： Bruce Faure , Alice Boussagol
- 申请人地址： FR Bernin
- 专利权人： S.O.I.Tec Silicon on Insulator Technologies S.A.
- 当前专利权人： S.O.I.Tec Silicon on Insulator Technologies S.A.
- 当前专利权人地址： FR Bernin
- 代理机构： Winston & Strawn LLP
- 优先权： FR0411579 20041029
- 主分类号： H01L21/30
- IPC分类号： H01L21/30
摘要：
A composite structure is disclosed that includes a support wafer and a layered structure on the support wafer. The layered structure includes at least one layer of a monocrystalline material and at least one layer of a dielectric material. In addition, the layered structure materials and the thickness of each layer are chosen such that the thermal impedance between ambient temperature and 600° K of the composite structure is a value that is no greater than about 1.3 times the thermal impedance of a monocrystalline bulk SiC wafer having the same dimensions as the composite structure. The composite structure provides sufficient heat dissipation properties for manufacturing optical, electronic, or optoelectronic components.
公开/授权文献
- US20060091400A1 Composite structure with high heat dissipation 公开/授权日：2006-05-04