发明授权
- 专利标题： Line edge roughness reduction
- 专利标题（中）： 线边粗糙度降低
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申请号： US10245760申请日： 2002-09-16
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公开(公告)号： US07135419B2公开(公告)日： 2006-11-14
- 发明人: Manish Chandhok , Robert P. Meagley
- 申请人： Manish Chandhok , Robert P. Meagley
- 申请人地址： US CA Santa Clara
- 专利权人： Intel Corporation
- 当前专利权人： Intel Corporation
- 当前专利权人地址： US CA Santa Clara
- 代理商 George Chen
- 主分类号： H01L21/31
- IPC分类号： H01L21/31 ; H01L21/469
摘要：
A base-loaded polymer is applied to a semiconductor feature formed after exposing and developing a photoresist layer in order to reduce line edge roughness caused by a residual acid collecting on the edges of the feature during the post-exposure bake of the photoresist. Alternatively, a polymer is applied containing grains that are of suitable for smoothing the line edge roughness.
公开/授权文献
- US20040053511A1 Line edge roughness reduction 公开/授权日：2004-03-18
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